Abstract: An optical oil component sensor and a sensing method using the sensor, which can identify similar fuel oil in real time. The optical oil component sensor includes a light source unit, a reference optical waveguide, configured to guide light thereinto, for receiving and outputting light emitted from the light source unit, a sensing optical waveguide, configured to guide light thereinto, for receiving and outputting light emitted from the light source unit, wherein a portion of the sensing optical waveguide is formed to be in contact with test target oil, a light-receiving unit for receiving both a reference light signal, output from the reference optical waveguide, and a test light signal, output from the sensing optical waveguide, and a control unit for identifying components of the test target oil by comparing optical properties of the reference light signal and the test light signal with each other.

Abstract: An optical oil component sensor and a sensing method using the sensor, which can identify similar fuel oil in real time. The optical oil component sensor includes a light source unit, a reference optical waveguide, configured to guide light thereinto, for receiving and outputting light emitted from the light source unit, a sensing optical waveguide, configured to guide light thereinto, for receiving and outputting light emitted from the light source unit, wherein a portion of the sensing optical waveguide is formed to be in contact with test target oil, a light-receiving unit for receiving both a reference light signal, output from the reference optical waveguide, and a test light signal, output from the sensing optical waveguide, and a control unit for identifying components of the test target oil by comparing optical properties of the reference light signal and the test light signal with each other.

Abstract: Disclosed herein is an optical circuit-type reformulated fuel detecting sensor device. The optical circuit-type reformulated fuel detecting sensor device includes: an optical source part generating optical signals having a single wavelength; a sensor part receiving the optical signals generated by the optical source part and outputting a reference optical signal and a sensed signal; a first photo-detector receiving the reference optical signal and outputting a reference optical output signal; a second photo-detector receiving the sensed signal and outputting a sensed optical output signal; an operation controlling part receiving the reference optical output signal and the sensed optical output signal and determining characteristics of fuel; and an output part receiving and outputting a result of the operation controlling part.

Abstract: Disclosed herein is an optical circuit-type reformulated fuel detecting sensor device. The optical circuit-type reformulated fuel detecting sensor device includes: an optical source part generating optical signals having a single wavelength; a sensor part receiving the optical signals generated by the optical source part and outputting a reference optical signal and a sensed signal; a first photo-detector receiving the reference optical signal and outputting a reference optical output signal; a second photo-detector receiving the sensed signal and outputting a sensed optical output signal; an operation controlling part receiving the reference optical output signal and the sensed optical output signal and determining characteristics of fuel; and an output part receiving and outputting a result of the operation controlling part.

Abstract: A terminal and an operation control method thereof are disclosed. A terminal performs an authentication procedure upon receiving a tag device's information from the tag device. If the tag device is identified as a registered tag device in the authentication procedure, initial data corresponding to a function to control the terminal even in a power-saving mode or a lock mode is received from the tag device, and the function corresponding to the initial data is performed.

Abstract: Provided is a method of manufacturing a via electrode by which productivity and production yield can be augmented or maximized. The method of the present invention includes: forming a via hole at a substrate; forming a catalyst layer at a sidewall and a bottom of the via hole; and forming a graphene layer in the via hole by exposing the catalyst layer to a solution mixed with graphene particles.

Abstract: Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.

Abstract: Disclosed is an intaglio printing plate including: a pattern portion where a to-be-printed pattern is located; a non-pattern portion corresponding to a remaining area other than the pattern portion; and a supplementary pattern portion having a repetitive pattern with a predetermined form, wherein at least a part of the pattern portion is divided by a pattern structure that is formed by the supplementary pattern portion.

Abstract: Provided is a method of manufacturing a via electrode by which productivity and production yield can be augmented or maximized. The method of the present invention includes: forming a via hole at a substrate; forming a catalyst layer at a sidewall and a bottom of the via hole; and forming a graphene layer in the via hole by exposing the catalyst layer to a solution mixed with graphene particles.

Abstract: Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.

Abstract: Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.

Abstract: A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.

Abstract: A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.

Abstract: Provided are a template used for nanoimprint lithography and a method for fabricating the same. A raised first deposition layer pattern including at least one downwardly sloped side surface is formed on a substrate. A second deposition layer pattern covering the side surface of the raised first deposition layer pattern and progressively decreasing in width downward along the side surface of the raised first deposition layer pattern is formed. A third deposition layer is formed on the entire surface of a structure on which the second deposition layer pattern. A second deposition layer nano pattern between the raised first deposition layer pattern and a planarized third deposition layer is formed by planarizing the third deposition layer to expose upper surfaces of the raised first deposition layer pattern and the second deposition layer pattern.

Abstract: Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.

Abstract: Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.

Abstract: Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.

Abstract: Provided are bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same. The bisphenylene-spirobifluorene compound is defined by the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms, X1 and X2 independently contains one or more elements selected from the group consisting of C, O, N, S, Si and Ge, and m and n are integers from 1 to 4.

Abstract: An organic electroluminescent device with an encapsulation film formed by wet processing and a manufacturing method thereof. The organic electroluminescent device includes a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed on a substrate, and an encapsulation film having a polymer layer made of a polymerization product of a vinyl monomer covering the laminate structure. In the method for manufacturing the organic electroluminescent device, a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed is formed on a substrate. An organic solution containing a vinyl monomer and a polymerization initiator is coated on the laminate structure. A polymerization reaction is induced to the organic solution coated on the laminate structure, thereby forming an encapsulation film made of a polymer layer on the laminate structure.

Abstract: Provided are spirobifluorene compounds which can provide excellent processibility with improved solubility in organic solvents, an electroluminescence (EL) polymer obtained therefrom and an EL element having the same. The EL polymer comprising repeating units of the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms or an aryl group substituted by C1-C22 alkyl, and at least one of the R1 and R2 contains one or more atoms selected from the group consisting of O, N, S, Si and Ge.