Abstract: Methods to improve adhesion of a first material to a second material and electronics devices fabricated using such methods are described. A porous polymer layer is formed on a conductive layer. Forming the porous polymer layer leaves portions of the conductive layer exposed. A porous conductive layer is formed over the porous polymer layer and the exposed portions of the conductive layer. A continuous polymer layer is formed over the porous conductive layer. In one embodiment, the polymer layer includes a ferroelectric polymer, and the conductive layer includes a noble metal, e.g., gold.

Abstract: Methods to improve adhesion of a first material to a second material and electronics devices fabricated using such methods are described. A porous polymer layer is formed on a conductive layer. Forming the porous polymer layer leaves portions of the conductive layer exposed. A porous conductive layer is formed over the porous polymer layer and the exposed portions of the conductive layer. A continuous polymer layer is formed over the porous conductive layer. In one embodiment, the polymer layer includes a ferroelectric polymer, and the conductive layer includes a noble metal, e.g., gold.

Abstract: An embodiment of the invention is a method of manufacturing a polymer for a polymer ferroelectric memory. In particular, and among other features, the method of an embodiment alters the ferroelectric transition temperature, or Curie temperature, of the polymer by rapidly cooling the polymer from an elevated temperature. In particular, an embodiment increases the Curie temperature of the polymer, expanding the operating range of a polymer ferroelectric memory formed therewith.

Abstract: The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening. The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

Abstract: A method of fabricating a ferroelectric memory module with conducting polymer electrodes, and a ferroelectric memory module fabricated according to the method. The ferroelectric polymer memory module includes a first set of layers including: an ILD layer defining trenches therein; a first electrode layer disposed in the trenches; a first conductive polymer layer disposed on the first electrode layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer. The module further includes a second set of layers including: an ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the ILD layer of the second set of layers; and a second electrode layer disposed on the second conductive polymer layer. The first conductive polymer layer and the second conductive polymer layer cover the electrode layers to provide a reaction and/or diffusion barrier between the electrode layers and the ferroelectric polymer layer.

Abstract: The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening. The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

Abstract: The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening. The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

Abstract: An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

Abstract: An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

Abstract: The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening.