Patents by Inventor Lee Sanghoon

Lee Sanghoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11716845
    Abstract: A semiconductor device includes a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked, a channel structure extending through the gate structure, and a source conductive pattern between the substrate and the gate structure. The source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern. The channel structure includes an insulating pattern extending through the source conductive pattern, a data storage pattern, and a channel pattern between the insulating pattern and the data storage pattern. A lower surface of the channel pattern is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: August 1, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Lee Sanghoon
  • Publication number: 20210335810
    Abstract: A semiconductor device includes a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked, a channel structure extending through the gate structure, and a source conductive pattern between the substrate and the gate structure. The source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern. The channel structure includes an insulating pattern extending through the source conductive pattern, a data storage pattern, and a channel pattern between the insulating pattern and the data storage pattern. A lower surface of the channel pattern is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.
    Type: Application
    Filed: October 23, 2020
    Publication date: October 28, 2021
    Inventor: LEE SANGHOON
  • Patent number: 9068042
    Abstract: The invention relates to an optically transparent polymer film or extrudate product made of a polymer composition comprising a semi-crystalline polyamide having a melting temperature of at least 270° C. or a blend of the semi-crystalline polyamide (A) and a second polymer (B), and optionally at least one additive, wherein the semi-crystalline polyamide (A) is present in an amount of more than 50 wt. %, relative to the total weight of the polymer composition, the polymer composition in the optically transparent polymer film or extrudate product has a melting temperature (Tm-C) in the range of 270-340° C., and wherein the film or a part of the extrudate product has a haze of less than 12% and a light transmittance, of at least 88% measured with the method according to ASTM D1003A.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: June 30, 2015
    Assignee: DSM IP ASSETS B.V.
    Inventors: Alexander Antonius Maria Stroeks, Rudy Rulkens, Lee Sanghoon, Sidiki Tamim Peter
  • Publication number: 20140135444
    Abstract: The invention relates to an optically transparent polymer film or extrudate product made of a polymer composition comprising a semi-crystalline polyamide having a melting temperature of at least 270° C. or a blend of the semi-crystalline polyamide (A) and a second polymer (B), and optionally at least one additive, wherein the semi-crystalline polyamide (A) is present in an amount of more than 50 wt. %, relative to the total weight of the polymer composition, the polymer composition in the optically transparent polymer film or extrudate product has a melting temperature (Tm-C) in the range of 270-340° C., and wherein the film or a part of the extrudate product has a haze of less than 12% and a light transmittance, of at least 88% measured with the method according to ASTM D1003A.
    Type: Application
    Filed: January 21, 2014
    Publication date: May 15, 2014
    Applicant: DSM IP ASSETS B.V.
    Inventors: Alexander Antonius Maria STROEKS, Rudy RULKENS, Lee SANGHOON, Sidiki Tamim PETER
  • Publication number: 20120094102
    Abstract: The invention relates to an optically transparent polymer film or extrudate product made of a polymer composition comprising a semi-crystalline polyamide having a melting temperature of at least 270° C. or a blend of the semi-crystalline polyamide (A) and a second polymer (B), and optionally at least one additive, wherein the semi-crystalline polyamide (A) is present in an amount of more than 50 wt. %, relative to the total weight of the polymer composition, the polymer composition in the optically transparent polymer film or extrudate product has a melting temperature (Tm-C) in the range of 270-340 ° C., and wherein the film or a part of the extrudate product has a haze of less than 12% and a light transmittance, of at least 88% measured with the method according to ASTM D1003A.
    Type: Application
    Filed: January 15, 2010
    Publication date: April 19, 2012
    Inventors: Alexander Antonius Maria Stroeks, Rudy Rulkens, Lee Sanghoon, Sidiki Tamim Peter
  • Patent number: D699767
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: February 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Choi Yoon-jung, Lee Sanghoon, Park Youngmin, Kim Jang-Won, Kim Ae-Ryun
  • Patent number: D701539
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: March 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Lee Saejin, Park Se-Hwan, Lee Sanghoon
  • Patent number: D709105
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: July 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Lee Saejin, Park Se-Hwan, Lee Sanghoon