Patents by Inventor Lee-Te Tseng

Lee-Te Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9378990
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: June 28, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
  • Publication number: 20150303080
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Application
    Filed: June 29, 2015
    Publication date: October 22, 2015
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
  • Publication number: 20150187616
    Abstract: Mechanisms of adjustable laser beams for LSA (Laser Spike Annealing) are provided. A computing device receives input mask information relative to a silicon wafer, and analyzes the input mask information so as to generate a control signal. A laser generator generates a laser beam, and adjusts a beam length of the laser beam according to the control signal. Such mechanisms of the disclosure effectively eliminate the stitch effect on the silicon wafer and further increase the wafer yield.
    Type: Application
    Filed: December 31, 2013
    Publication date: July 2, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chun HUANG, Lee-Te TSENG, Wen-Chieh HUANG, Chi-Fu YU, Ming-Te CHEN
  • Patent number: 9070591
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Grant
    Filed: December 24, 2012
    Date of Patent: June 30, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
  • Publication number: 20140273533
    Abstract: A semiconductor annealing method and system uses a vacuum pump to produce a vacuum environment in the annealing chamber to thereby remove undesired gas element influences. A control system obtains pressure and temperature measurements from the annealing chamber to control operation of the heating elements and vacuum pump to thereby maintain process integrity.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jen-Chan Tsun, Ta-Lu Cheng, Lee-Te Tseng, Yi-Hann Chen, Ming-Te Chen