Abstract: An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film.

Abstract: The present invention discloses an optical disc storage device which comprises an upper and a lower casings of the size and shape allowing them to be assembled together and form an space for accommodating at least one optical disc; at least one protrusion disposed on an inner side of any of the two casings, such that the diameter of the protrusion restricts a positioning hole of the optical disc at the outer edge of the protrusion; a magnetic component disposed adjacent to the center of the protrusion, so that the optical disc storage device can be attached securely onto metal panel of any appliances, such as a refrigerator, an office appliance or a white board, by the action of the magnetic component for exhibitions and easy accesses, which also enables several optical disc storage devices to be adhered together and stacked or aligned neatly together for a convenient storage.