Patents by Inventor Lee Veneklasen

Lee Veneklasen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6803572
    Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.
    Type: Grant
    Filed: July 1, 2003
    Date of Patent: October 12, 2004
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Lee Veneklasen, David L. Adler
  • Patent number: 6720565
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: April 13, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
  • Publication number: 20040000642
    Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.
    Type: Application
    Filed: July 1, 2003
    Publication date: January 1, 2004
    Inventors: Lee Veneklasen, David L. Adler
  • Patent number: 6610980
    Abstract: A novel dual beam low energy electron microscope (LEEM) apparatus for inspecting semiconductor circuits or masks. Direct imaging records many pixels in parallel, offering higher inspection rates than prior art scanning methods. A low energy flood beam is superimposed with a second, higher energy flood beam. The use of two beams avoids charging effects upon insulating or partially insulating substrates. Under appropriate conditions, the net charging flux to each image element can be balanced on a pixel by pixel, as well as global basis. Either the low energy or the higher energy beam may be used to form an image of the surface. An electron optical apparatus and configuration for this dual beam LEEM is described.
    Type: Grant
    Filed: May 11, 2001
    Date of Patent: August 26, 2003
    Assignee: KLA-Tencor Corporation
    Inventors: Lee Veneklasen, David L. Adler, Matthew Marcus
  • Patent number: 6586733
    Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.
    Type: Grant
    Filed: May 25, 2000
    Date of Patent: July 1, 2003
    Assignee: KLA-Tencor
    Inventors: Lee Veneklasen, David L. Adler
  • Patent number: 6563124
    Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: May 13, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Lee Veneklasen, Vidhya Krishnamurthi, Gil Winograd
  • Publication number: 20020148978
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
    Type: Application
    Filed: October 26, 2001
    Publication date: October 17, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen, Mary Veneklasen
  • Publication number: 20020134912
    Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.
    Type: Application
    Filed: March 21, 2001
    Publication date: September 26, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Lee Veneklasen, Vidhya Krishnamurthi, Gil Winograd, Mary Veneklasen
  • Publication number: 20020070340
    Abstract: A novel dual beam low energy electron microscope (LEEM) apparatus for inspecting semiconductor circuits or masks. Direct imaging records many pixels in parallel, offering higher inspection rates than prior art scanning methods. A low energy flood beam is superimposed with a second, higher energy flood beam. The use of two beams avoids charging effects upon insulating or partially insulating substrates. Under appropriate conditions, the net charging flux to each image element can be balanced on a pixel by pixel, as well as global basis. Either the low energy or the higher energy beam may be used to form an image of the surface. An electron optical apparatus and configuration for this dual beam LEEM is described.
    Type: Application
    Filed: May 11, 2001
    Publication date: June 13, 2002
    Inventors: Lee Veneklasen, David L. Adler, Matthew Marcus
  • Patent number: 6373071
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: April 16, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
  • Patent number: 5784925
    Abstract: A vacuum compatible linear motion device having a fluid bearing is contained within a vacuum chamber having a working pressure of significantly less than one atmosphere. The fluid bearing is contained within a vacuum enclosure within the vacuum chamber and is maintained at a pressure higher than that of the vacuum chamber but less than one atmosphere, thus essentially isolating the fluid bearing. A moveable payload is coupled to the linear motion device such that linear motion in the direction of the long axis of the device is provided to the moveable payload.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: July 28, 1998
    Assignee: Etec Systems, Inc.
    Inventors: David Trost, Lee Veneklasen
  • Patent number: 5502306
    Abstract: There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means.
    Type: Grant
    Filed: March 17, 1994
    Date of Patent: March 26, 1996
    Assignee: KLA Instruments Corporation
    Inventors: Dan Meisburger, Alan D. Brodie, Curt Chadwick, Anil Desai, Hans Dohse, Dennis Emge, John Greene, Ralph Johnson, Ming-Yie Ling, John McMurtry, Barry Becker, Ray Paul, Mike Robinson, Richard Simmons, David E. A. Smith, John Taylor, Lee Veneklasen, Dean Walters, Paul Wieczorek, Sam Wong, April Dutta, Surendra Lele, Kirkwood Rough, Henry Pearce-Percy, Jack Y. Jau, Chun C. Lin, Hoi T. Nguyen, Yen-Jen Oyang, Timothy L. Hutcheson, David J. Clark, Chung-Shih Pan, Chetana Bhaskar, Chris Kirk, Eric Munro
  • Patent number: 4788431
    Abstract: A specimen distance measuring system uses a plate (36) to obstruct the flux of backscattered electrons produced by an electron beam (18), and to cast a shadow across a measurement detector (32) which is sensitive to the position of the shadow. The shadow plate (36) and measurement detector (32) are aligned at an angle of approximately 45 degrees with a substrate (14) in order to allow calibration of the distance measuring system by scanning the electron beam (18). The measuring system is particularly useful as a height sensor (10) in an electron beam lithography apparatus (12) for sensing the height of a substrate (14). The distance measuring system may also include a reference detector (34) which is positioned in order to receive backscattered electron flux without obstruction from the shadow plate (36).
    Type: Grant
    Filed: April 10, 1987
    Date of Patent: November 29, 1988
    Assignee: The Perkin-Elmer Corporation
    Inventors: William A. Eckes, Lee Veneklasen, Glen E. Howard, Donald J. McCarthy, Allen M. Carroll, Daniel L. Cavan