Patents by Inventor Lee Veneklasen
Lee Veneklasen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6803572Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.Type: GrantFiled: July 1, 2003Date of Patent: October 12, 2004Assignee: KLA-Tencor Technologies CorporationInventors: Lee Veneklasen, David L. Adler
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Patent number: 6720565Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.Type: GrantFiled: October 26, 2001Date of Patent: April 13, 2004Assignee: Applied Materials, Inc.Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
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Publication number: 20040000642Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.Type: ApplicationFiled: July 1, 2003Publication date: January 1, 2004Inventors: Lee Veneklasen, David L. Adler
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Patent number: 6610980Abstract: A novel dual beam low energy electron microscope (LEEM) apparatus for inspecting semiconductor circuits or masks. Direct imaging records many pixels in parallel, offering higher inspection rates than prior art scanning methods. A low energy flood beam is superimposed with a second, higher energy flood beam. The use of two beams avoids charging effects upon insulating or partially insulating substrates. Under appropriate conditions, the net charging flux to each image element can be balanced on a pixel by pixel, as well as global basis. Either the low energy or the higher energy beam may be used to form an image of the surface. An electron optical apparatus and configuration for this dual beam LEEM is described.Type: GrantFiled: May 11, 2001Date of Patent: August 26, 2003Assignee: KLA-Tencor CorporationInventors: Lee Veneklasen, David L. Adler, Matthew Marcus
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Patent number: 6586733Abstract: Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled.Type: GrantFiled: May 25, 2000Date of Patent: July 1, 2003Assignee: KLA-TencorInventors: Lee Veneklasen, David L. Adler
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Patent number: 6563124Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.Type: GrantFiled: March 21, 2001Date of Patent: May 13, 2003Assignee: Applied Materials, Inc.Inventors: Lee Veneklasen, Vidhya Krishnamurthi, Gil Winograd
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Publication number: 20020148978Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.Type: ApplicationFiled: October 26, 2001Publication date: October 17, 2002Applicant: Applied Materials, Inc.Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen, Mary Veneklasen
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Publication number: 20020134912Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.Type: ApplicationFiled: March 21, 2001Publication date: September 26, 2002Applicant: Applied Materials, Inc.Inventors: Lee Veneklasen, Vidhya Krishnamurthi, Gil Winograd, Mary Veneklasen
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Publication number: 20020070340Abstract: A novel dual beam low energy electron microscope (LEEM) apparatus for inspecting semiconductor circuits or masks. Direct imaging records many pixels in parallel, offering higher inspection rates than prior art scanning methods. A low energy flood beam is superimposed with a second, higher energy flood beam. The use of two beams avoids charging effects upon insulating or partially insulating substrates. Under appropriate conditions, the net charging flux to each image element can be balanced on a pixel by pixel, as well as global basis. Either the low energy or the higher energy beam may be used to form an image of the surface. An electron optical apparatus and configuration for this dual beam LEEM is described.Type: ApplicationFiled: May 11, 2001Publication date: June 13, 2002Inventors: Lee Veneklasen, David L. Adler, Matthew Marcus
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Patent number: 6373071Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.Type: GrantFiled: June 30, 1999Date of Patent: April 16, 2002Assignee: Applied Materials, Inc.Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
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Patent number: 5784925Abstract: A vacuum compatible linear motion device having a fluid bearing is contained within a vacuum chamber having a working pressure of significantly less than one atmosphere. The fluid bearing is contained within a vacuum enclosure within the vacuum chamber and is maintained at a pressure higher than that of the vacuum chamber but less than one atmosphere, thus essentially isolating the fluid bearing. A moveable payload is coupled to the linear motion device such that linear motion in the direction of the long axis of the device is provided to the moveable payload.Type: GrantFiled: December 13, 1996Date of Patent: July 28, 1998Assignee: Etec Systems, Inc.Inventors: David Trost, Lee Veneklasen
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Patent number: 5502306Abstract: There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means.Type: GrantFiled: March 17, 1994Date of Patent: March 26, 1996Assignee: KLA Instruments CorporationInventors: Dan Meisburger, Alan D. Brodie, Curt Chadwick, Anil Desai, Hans Dohse, Dennis Emge, John Greene, Ralph Johnson, Ming-Yie Ling, John McMurtry, Barry Becker, Ray Paul, Mike Robinson, Richard Simmons, David E. A. Smith, John Taylor, Lee Veneklasen, Dean Walters, Paul Wieczorek, Sam Wong, April Dutta, Surendra Lele, Kirkwood Rough, Henry Pearce-Percy, Jack Y. Jau, Chun C. Lin, Hoi T. Nguyen, Yen-Jen Oyang, Timothy L. Hutcheson, David J. Clark, Chung-Shih Pan, Chetana Bhaskar, Chris Kirk, Eric Munro
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Patent number: 4788431Abstract: A specimen distance measuring system uses a plate (36) to obstruct the flux of backscattered electrons produced by an electron beam (18), and to cast a shadow across a measurement detector (32) which is sensitive to the position of the shadow. The shadow plate (36) and measurement detector (32) are aligned at an angle of approximately 45 degrees with a substrate (14) in order to allow calibration of the distance measuring system by scanning the electron beam (18). The measuring system is particularly useful as a height sensor (10) in an electron beam lithography apparatus (12) for sensing the height of a substrate (14). The distance measuring system may also include a reference detector (34) which is positioned in order to receive backscattered electron flux without obstruction from the shadow plate (36).Type: GrantFiled: April 10, 1987Date of Patent: November 29, 1988Assignee: The Perkin-Elmer CorporationInventors: William A. Eckes, Lee Veneklasen, Glen E. Howard, Donald J. McCarthy, Allen M. Carroll, Daniel L. Cavan