Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract: A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.

Abstract: A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.

Abstract: A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

Abstract: A heat shield assembly is adapted for location within a crystal puller, with respect to a crucible, above molten source material held by the crucible in the puller. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten material and is generally interposed between the ingot and the crucible as the ingot is pulled from the source material. The heat shield assembly comprises an outer reflector having an inner surface and an outer surface in generally opposed, spaced relationship with a side wall of the crucible, and an inner reflector located inward of the outer reflector. The inner reflector is constructed of a material having a low emissivity and has an outer surface in generally opposed relationship with the inner surface of the outer reflector.

Abstract: A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

Abstract: A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.

Abstract: A heat shield assembly is used in a Czochralski crystal puller for selectively shielding a monocrystalline ingot of semiconductor material to control the type and number density of agglomerated defects in the crystal structure of the ingot. The heat shield assembly has an upper heat shield connected to a lower heat shield. The upper and lower heat shields are connected to each other and slidingly connected to an intermediate heat shield. The lower heat shield is able to telescope up into the intermediate heat shield to minimize the profile of the heat shield assembly located within a crystal growth chamber of the crystal puller. However when needed to control formation of the monocrystalline ingot, the lower heat shield may be extended from the intermediate heat shield and project downwardly into the crystal puller crucible in close proximity to an upper surface of molten semiconductor source material in the crucible. A method employing the heat shield assembly is also disclosed.

Abstract: A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.