Abstract: A modular thin film deposition system, includes a machine base, a deposition head for depositing a thin film of material onto a process surface of a substrate, a motion actuator including a fixed portion and a moveable portion, and one or more interchangeable substrate positioner modules adapted to mount on the moveable portion of the motion actuator. The interchangeable substrate positioner modules include kinematic mounting features that engage with corresponding kinematic mounting features on the moveable portion of the motion actuator. The motion actuator moves the interchangeable substrate positioner in a motion direction, thereby moving the substrate in an in-track direction in a plane parallel to the output face of the deposition head during deposition of the thin film of material onto the process surface of the substrate.

Abstract: A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.

Abstract: A material deposition system for depositing a material on a surface of a substrate includes a deposition head having an output face configured to simultaneously supply a plurality of gaseous materials in a sequence of gas zones. The gas zones include a deposition zone located between first and second inert zones. The deposition zone includes a first reactant zone adjacent to the first inert zone, a last reactant zone adjacent to the second inert zone, and one or more purge gas zones. A motion actuator moves a substrate over the output face with a repeating motion profile that prevents a region of active deposition on the substrate from being exposed to the external environment prior to having achieved a final material deposition amount. The repeating motion profile include a forward motion portion and a backward motion portion which is less than the forward distance by an ooch distance.

Abstract: A deposition unit for a thin film deposition system includes a plurality of deposition heads. Each deposition head includes an output face having a plurality of gas slots extending in a cross-track direction. Two of the deposition heads are positioned adjacent to each other in the cross-track direction such that the adjacent deposition heads have abutting ends. The abutting ends of the adjacent deposition heads include interlocking structures having an alternating sequence of protrusions and recesses such that the protrusions on the abutting end of one adjacent deposition head fit into the recesses on the abutting end of the other adjacent deposition head. The gas slots extend into the protrusions on the abutting ends such that in an overlap region, the gas slots of one adjacent deposition head overlap with the gas slots of the other adjacent deposition head.

Abstract: A compositionally-graded thin film is formed on a substrate by atomic layer deposition. A mixing system provides a homogeneous gaseous mixture having a controllable ratio of first and second reactive gaseous species. The first and second reactive gaseous species each react with a third reactive gaseous species but do not react with each other. A deposition unit includes first and second reactive gas zones. The homogeneous gaseous mixture is provided to the first reactive gas zone, and the third reactive gaseous species is provided to the second reactive gas zone. The mixing system is controlled to change the ratio of the first and second reactive gaseous species as a function of time as the substrate is moved relative to the deposition unit such that the deposited material has a variable composition as a function of height above the substrate.

Abstract: A spatial atomic layer deposition system is provided to fabricate a compositionally-graded thin film. A mixing system provides a homogeneous gaseous mixture having a controllable ratio of first and second reactive gaseous species. The first and second reactive gaseous species each react with a third reactive gaseous species but do not react with each other. A deposition unit includes first and second reactive gas zones. The homogeneous gaseous mixture is provided to the first reactive gas zone, and the third reactive gaseous species is provided to the second reactive gas zone. The mixing system is controlled to change the ratio of the first and second reactive gaseous species as a function of time as the substrate is moved relative to the deposition unit such that the deposited material has a variable composition as a function of height above the substrate.

Abstract: A thin-film optical device is formed on a substrate by atomic layer deposition. A mixing system provides a homogeneous gaseous mixture having a controllable ratio of first and second reactive gaseous materials. The first and second reactive gaseous materials each react with a third reactive gaseous material but do not react with each other. The homogeneous gaseous mixture is provided to a first inlet port, the third reactive gaseous material is provided to a second inlet port, and an inert gaseous material is provided to a third inlet port. The gas flows are directed through corresponding output channels of the delivery head toward the substrate. The mixing system is controlled to change the ratio of the first and second reactive gaseous materials as a function of time as the substrate is moved relative to the delivery head with an oscillating motion such that deposited layers have a varying composition.

Abstract: A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.

Abstract: A modular thin film deposition system, includes a machine base, a deposition head for depositing a thin film of material onto a process surface of a substrate, a motion actuator including a fixed portion and a moveable portion, and one or more interchangeable substrate positioner modules adapted to mount on the moveable portion of the motion actuator. The interchangeable substrate positioner modules include kinematic mounting features that engage with corresponding kinematic mounting features on the moveable portion of the motion actuator. The motion actuator moves the interchangeable substrate positioner in a motion direction, thereby moving the substrate in an in-track direction in a plane parallel to the output face of the deposition head during deposition of the thin film of material onto the process surface of the substrate.

Abstract: A material deposition system for depositing a material on a surface of a substrate includes a deposition head having an output face configured to simultaneously supply a plurality of gaseous materials in a sequence of gas zones. The gas zones include a deposition zone located between first and second inert zones. The deposition zone includes a first reactant zone adjacent to the first inert zone, a last reactant zone adjacent to the second inert zone, and one or more purge gas zones. A motion actuator moves a substrate over the output face with a repeating motion profile that prevents a region of active deposition on the substrate from being exposed to the external environment prior to having achieved a final material deposition amount. The repeating motion profile include a forward motion portion and a backward motion portion which is less than the forward distance by an ooch distance.

Abstract: A deposition unit for a thin film deposition system includes a plurality of deposition heads. Each deposition head includes an output face having a plurality of gas slots extending in a cross-track direction. Two of the deposition heads are positioned adjacent to each other in the cross-track direction such that the adjacent deposition heads have abutting ends. The abutting ends of the adjacent deposition heads include interlocking structures having an alternating sequence of protrusions and recesses such that the protrusions on the abutting end of one adjacent deposition head fit into the recesses on the abutting end of the other adjacent deposition head. The gas slots extend into the protrusions on the abutting ends such that in an overlap region, the gas slots of one adjacent deposition head overlap with the gas slots of the other adjacent deposition head.

Abstract: A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile.

Abstract: A method of making an electrical conductor includes depositing an ultra-thin layer including aluminum-doped zinc oxide layer on a surface and using atomic layer deposition to deposit a nano-layer including alumina in contact and conformal with a surface of the ultra-thin layer including aluminum-doped zinc oxide.

Abstract: A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

Abstract: An electrical conductor includes an ultra-thin layer of aluminum-doped zinc-oxide and a nano-layer of alumina in contact and conformal with a surface of the ultra-thin aluminum-doped zinc-oxide layer.

Abstract: A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

Abstract: A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

Abstract: A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

Abstract: A method of making an electrical conductor includes depositing an ultra-thin layer including aluminum-doped zinc oxide layer on a surface and using atomic layer deposition to deposit a nano-layer including alumina in contact and conformal with a surface of the ultra-thin layer including aluminum-doped zinc oxide.

Abstract: An electrical conductor includes an ultra-thin layer of aluminum-doped zinc-oxide and a nano-layer of alumina in contact and conformal with a surface of the ultra-thin aluminum-doped zinc-oxide layer.