Patents by Inventor Lee Y. Hwang

Lee Y. Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device using a spacer
    Patent number: 5620912
    Abstract: A semiconductor device and manufacturing method wherein a gate insulating film is formed on a semiconductor substrate. A gate is formed on the gate insulating film and a sidewall spacer is formed on respective sides of the gate. The substrate is etched at the respective sides of the gate to form respective recessed parts of the substrate. An insulating film is provided on the recessed parts of the substrate and the recessed parts are filled with a semiconductor layer. Impurity regions are formed contacting the semiconductor layer in the semiconductor substrate on the respective sides of the gate.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: April 15, 1997
    Assignee: LG Semicon Co., Ltd.
    Inventors: Lee Y. Hwang, Hong S. Kim