Abstract: Provided is a laundry treating apparatus including a cabinet, a laundry care device movably provided inside the cabinet, wherein the laundry care device includes a jetting unit configured to jet air to the laundry, and a suction unit into which air jetted by the jetting unit, after passing through the laundry, is suctioned. Inside of the laundry treating apparatus is kept pleasant and laundry care efficiency is enhanced.

Abstract: Provided is a beauty care pack including: a support; and a membrane that is laminated on the support so as to be separated by moisture, formed by electrospinning a polymer material, a water-soluble polymer material and a functional material, and a dry type, in which the functional material is dissolved by moisture, to thereby enable an easy and convenient storage and package, and enable a convenient use since a dry sheet is attached to the face.

Abstract: The present specification provides a pixel circuit miniaturized using a smaller number of transistors as compared with the related art. A 4T static random-access memory (SRAM) is used in an embedded pixel memory, and in order to prevent a voltage floating problem from occurring in a logic low state, a leakage current is designed to flow in one direction by adjusting a threshold voltage of a transistor. In addition, a pulse width modulation (PWM) control unit uses a smaller number of transistors as compared with the related art, and in order to prevent a voltage floating problem from occurring, a circuit capable of removing a floating voltage is provided.

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

Abstract: A method for controlling power of a sidelink signal by a relay UE in a wireless communication system according to various embodiments and an apparatus therefor are provided. Disclosed are a method for controlling power of a sidelink signal by a relay UE and an apparatus therefor, the method comprising the steps of: receiving, from a remote UE transmitting or receiving a side link signal, first measurement information which is measurement information obtained by measuring reception power of the sidelink signal; comparing the first measurement information with second measurement information which is information on the reception power of the sidelink signal having been measured by the relay UE, so as to determine measurement information to be reported to a base station, among the first measurement information and the second measurement information; and receiving, from the base station, power control information configured on the basis of the determined measurement information.

Abstract: An electronic device is provided. The electronic device includes a display disposed toward a first surface, a housing including an opening formed toward a second surface, a tray including a hole formed toward the second surface, a sensor module that is able to be seated on the tray, a connector disposed adjacent to the opening inside the electronic device to receive the tray and the sensor module, and a processor configured to control the sensor module when the sensor module is inserted into the connector. The sensor module includes a gas sensor, a sensor chamber, and a pipe forming a path allowing gas, which is introduced through the hole, to move into the sensor chamber.

Abstract: A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor is disposed on the substrate within a first region and includes a first gate electrode. The first gate electrode includes a first filter layer between and in contact with a first conductive layer and a second conductive layer. The second transistor is disposed on the substrate within a second region and includes a second gate electrode. The second gate electrode includes a second filter layer between and in contact with a third conductive layer and a fourth conductive layer. The first transistor and the second transistor have a same conductive type, a first threshold voltage of the first transistor is lower than a second threshold voltage of the second transistor, and a first thickness of the first filter layer is larger than a second thickness of the second filter layer.

Abstract: A display device includes a fingerprint sensor including a first layer having at least one photo sensor to generate a fingerprint image corresponding to reflected light from a fingerprint contact surface, light emitting elements to transmit light reflected by the fingerprint, and a second layer including pin holes to allow reflected light to be incident upon the at least one photo sensor; and fingerprint detector to receive the fingerprint image from the fingerprint sensor, to extract a first image corresponding to a first region of the fingerprint and a second image corresponding to a second region of the fingerprint, to compare the first and second images to determine similarity, and to perform fingerprint authentication, based on similarity determination, where the fingerprint first region is in contact with the fingerprint contact surface and the fingerprint second region is not in contact with the fingerprint contact surface.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: A memory system may include: a nonvolatile memory device; a volatile memory device to which power is suspended in the sleep mode; and a controller configured to temporarily store internal data in the volatile memory device, the internal data being generated during processing of an operation of the nonvolatile memory device. When a sleep command is received by the memory system from a host, the controller may output the internal data stored in the volatile memory device to the host in response to the sleep command, and then may transfer an acknowledgement for an entry into the sleep mode to the host and enter the sleep mode.

Abstract: A mask assembly may include a frame, first sticks, and masks. The first sticks may extend in a first direction and may be arranged in a second direction. The plurality of masks may be disposed on the frame and the first sticks. The plurality of masks may extend in the second direction and may be arranged in the first direction. Each of the first sticks may have a first edge and a second edge, which are opposite to each other in the second direction. When viewed in a plan view defined by the first and second directions, the first and second edges of an outermost stick of the first sticks may have different shapes, and linear lengths of the first and second edges of the outermost stick may be substantially equal to each other, where the linear lengths are lengths of the first and second edges in a straight state.

Abstract: A semiconductor package includes a main substrate, a resonator device disposed above the main substrate, a wiring portion connected to the resonator device, an electrical connection structure connected to the wiring portion and the main substrate, an encapsulant encapsulating the resonator device and the electrical connection structure, and a heat dissipation member bonded to and mounted on the resonator device. A cavity is provided in the resonator device, and is formed between the resonance portion and a resonator device substrate provided in the resonator device.

Abstract: Provided herein are a positive electrode for a secondary battery and a secondary battery including the same. The positive electrode includes a positive electrode active material layer including a positive electrode active material, a conductive material, and a dispersant, wherein the conductive material includes bundle-type carbon nanotubes, units of which have an average strand diameter of 15 nm or less, and the positive electrode active material layer has a packing density of 3.0 g/cc or more, and has an average pore diameter of 0.1 ?m to 0.5 ?m at the packing density when a pore size distribution is measured by mercury intrusion porosimetry, and thus may exhibit excellent electrolyte wetting properties. As a result, when the positive electrode is applied to a battery, wetting time of the positive electrode is shortened, and an area of the positive electrode that is not filled with an electrolyte is reduced, resulting in enhanced battery performance.

Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

Abstract: The present invention relates to an electrode assembly and a method for manufacturing the same, and more particularly, to an electrode assembly in which a degree of alignment of cells is improved and a method for manufacturing the same. An electrode assembly according to the present invention comprises a separator sheet folded in a zigzag shape and a unit cell having a structure in which an electrode and a separator are alternately stacked, wherein the unit cell is repeatedly disposed between the separator sheet that is folded in a zigzag shape, and at least a portion of the unit cell and at least a portion of the separator sheet are bonded to each other.

Abstract: A display system includes a first display coupled to a roller and a second display coupled to the roller such that the first and second displays can be rolled about the roller for storage and transportation and unrolled from the roller to form a large area display. The second rollable display can be rolled about the roller with a rear surface of the second rollable display in direct contact with an outer surface of the roller and the first rollable display can be rolled about the roller with a front surface of the first rollable display in direct contact with a front surface of the second rollable display. First and second flexible films, first and second source printed circuit boards, first and second flexible cables, and first and second control printed circuit boards can be located inside the roller.

Abstract: A display device includes a substrate including a first area, a second area, and a bending area. A plurality of first wires are positioned in the first area. A plurality of second wires are positioned in the second area. An insulating layer is positioned in the bending area. A plurality of connecting wires are disposed on the insulating layer. Each of the connecting wires is connected with at least one of the first wires and at least one of the second wires. Each of the connecting wires includes a first portion and a second portion alternatingly arranged along an extending direction of the connecting wires. A width of the first portion is wider than a width of the second portion in a direction perpendicular to the extending direction each of the connecting wires.

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate to form an active area of the apparatus. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region. An isolation trench is adjacent to the active area. The trench includes a dielectric material with a conductive bias opposing the conductive bias of the channel in the active area.