Abstract: A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices.

Abstract: Disclosed are dielectric devices having a multi-layer oxide artificial lattice and a method for manufacturing the same. The method is adapted for a dielectric device having a substrate, a dielectric film coated on the substrate so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, a dielectric device having a substrate, a bottom electrode deposited on the substrate so as to be patterned thereon, a dielectric film coated on an upper portion of the lower electrode so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, or a dielectric device having a substrate, a bottom electrode deposited on the substrate and selectively patterned thereon, and a dielectric film coated on an upper portion of the bottom electrode so as to be selectively patterned thereon. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness.