Abstract: A seed sorting system for sorting seeds includes a seed transfer station configured to move seeds through the system. An imaging assembly includes an x-ray camera configured to acquire x-ray images of the seeds as the seeds move through the system. The x-ray camera is configured to produce high quality images at high line scan rates to accommodate a speed and width at which the seeds are moved by the seed transfer station through the system. A sorting assembly is configured to sort the seeds into separate bins based on the acquired x-ray images of the seeds.

Abstract: In a method of processing seeds, an angle of repose of processed seeds is determined to evaluate whether the processed seeds have been sufficiently processed in a processing step. In a system for determining an angle of repose of processed seeds, a receptacle receives and supports the seeds in a pile. An image sensor faces the receptacle to capture an image of the pile of processed seeds in the cavity. An image processor is operatively connected to the image sensor to receive the captured image from the image sensor. The image evaluates the image to determine an angle of inclination of the pile based on the image.

Abstract: A seed sorting system for sorting seeds includes a seed transfer station configured to move seeds through the system. An imaging assembly includes an x-ray camera configured to acquire x-ray images of the seeds as the seeds move through the system. The x-ray camera is configured to produce high quality images at high line scan rates to accommodate a speed and width at which the seeds are moved by the seed transfer station through the system. A sorting assembly is configured to sort the seeds into separate bins based on the acquired x-ray images of the seeds.

Abstract: In a method of processing seeds, an angle of repose of processed seeds is determined to evaluate whether the processed seeds have been sufficiently processed in a processing step. In a system for determining an angle of repose of processed seeds, a receptacle receives and supports the seeds in a pile. An image sensor faces the receptacle to capture an image of the pile of processed seeds in the cavity. An image processor is operatively connected to the image sensor to receive the captured image from the image sensor. The image evaluates the image to determine an angle of inclination of the pile based on the image.

Abstract: The invention relates to a camera device and a method for manufacturing such a device. The camera device comprises an image capturing element, a lens element for imaging an object at the image capturing element and a spacer means for maintaining a predetermined distance along the main optical axis though the lens and the image capturing element, and lens substrate for carrying the lens wherein the spacer means comprises an adhesive layer. This enables a mass manufacturing process wherein parts of the individual camera elements can be manufactured in manifold on different substrates, after which the different substrates are stacked, aligned and joined via adhesive layers. In the manufacturing process the different distances between the plates and the wafers are adjusted and maintained via the spacer means comprising the adhesive layers. From the stack individual camera devices are sawn out.

Abstract: A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity.

Abstract: The invention relates to a camera device and a method for manufacturing such a device. The camera device comprises an image capturing element, a lens element for imaging an object at the image capturing element and a spacer means for maintaining a predetermined distance along the main optical axis through the lens and the image capturing element, and lens substrate for carrying the lens wherein the spacer means comprises an adhesive layer. This enables a mass manufacturing process wherein parts of the individual camera elements can be manufactured in manifold on different substrates, after which the different substrates are stacked, aligned and joined via adhesive layers. In the manufacturing process the different distances between the plates and the wafers are adjusted and maintained via the spacer means comprising the adhesive layers. From the stack individual camera devices are sawn out.

Abstract: The invention relates to a camera module (10) which comprises a semiconductor housing (1) that contains a solid-state image sensor (2) with a radiation-sensitive surface area (3), and an optical element (4) located above the solid-state sensor (2) and which forms a shield against laterally scattered radiation, comprising a disk-shaped body with a primary radiation-opaque area and a secondary radiation-transparent area located within the primary area, of which a surface close to the sensor (2) is smaller than a surface more remote from the sensor (2).

Abstract: The invention relates to a camera device and a method for manufacturing such a device. The camera device comprises an image capturing element, a lens element for imaging an object at the image capturing element and a spacer means for maintaining a predetermined distance along the main optical axis though the lens and the image capturing element, and lens substrate for carrying the lens wherein the spacer means comprises an adhesive layer. This enables a mass manufacturing process wherein parts of the individual camera elements can be manufactured in manifold on different substrates, after which the different substrates are stacked, aligned and joined via adhesive layers. In the manufacturing process the different distances between the plates and the wafers are adjusted and maintained via the spacer means comprising the adhesive layers. From the stack individual camera devices are sawn out.

Abstract: Electrical connection is provided to a device region (3,4) bounded by an insulating region (12a,12b,9) and adjacent one major surface (1a) of a semiconductor body (1) by applying a flowable organic material to form an organic layer (20) on the one major surface (1a), defining a masking layer (30) over the organic layer (20), etching the organic layer (20) selectively with respect to the underlying device and insulating regions through a window (31) in the masking layer (30) to form an opening (21) exposing a contact area (11) of the device region (3,4) and depositing electrically conductive material, for example tungsten, to form a conductive pillar (40) within the opening (21) in contact with the contact area (11). The organic layer (20) is then removed so as to expose the conductive pillar (40), a layer 50 of insulating material is provided over the pillar, the insulating layer is etched to expose a top surface of the pillar and electrically conductive material deposited to contact the pillar (40).

Abstract: A semiconductor body has a surface structure (10) with an insulating layer (11) through which is formed an opening (12) defining a side wall (13) of insulating material bounding an exposed surface area (14a) of a region (14). An activating layer (15) is provided on the exposed surface area (14a) and the side wall (13) of the opening (12), and electrically conductive material deposited on the activating layer (15) to form an electrically conductive region (16) in the opening (12).

Abstract: Electrical connection to a device region (3,4) of a semiconductor device is formed by providing a semiconductor body (1) having adjacent one major surface (12) a device region (3,4) bounded by an insulating region (19a,19b,9), providing an activating layer (11) on the one major surface (12), applying a flowable material as a layer (13) of photosensitive resist, exposing and developing the resist to define an opening (14) over a contact area (12a) of the device region (3,4), and selectively plating electrically conductive material into the opening (14) to form a conductive pillar (15) in electrical contact with the contatct area (12a). The layer (13) of photosensitive resist is removed after formation of the conductive pillar (15) and a layer of insulating material is then provided to cover the conductive pillar (15) and the surface (12). The insulating layer is then etched to expose a top surface (15a) of the conductive pillar (15).

Abstract: A method of enabling electrical connection to a substructure (10) forming part of an electronic device, such as an integrated circuit, is described in which an aluminum-containing electrically conductive level (1) is provided on a surface (12) of the substructure (10), an insulating layer (2) is deposited so as to cover the aluminum-containing electrically conductive level (1), a photosensitive resist layer (3) is provided on the insulating layer and a plasma etching step is then used to etch away insulating material so as to expose an electrically conductive surface to enable electrical connection to be made to the level (1). The insulating material (2) may be etched through a window in the resist layer (3) so as to form a via (14) or the resist layer (3) and insulating material (2) may be etched uniformly to provide a planarized surface.

Abstract: A method of the kind consisting in that a contact is obtained with an active zone (11) carried by a semiconductor substrate (10) by means of conductive contact studs (18a) located in the contact openings (16c) of an isolating layer (12) and in that then a metallic configuration of interconnections (22) is formed establishing the conductive connection with the conductive contact studs (18a). A separation layer (13) is provided between the isolating layer (12) and the conductive layer (18), which can be eliminated selectively with respect to the isolating layer (12). Thus, the isolating layer (12) retains its original flatness and the conductive contact studs (18a) have an upper level (20) exceeding slightly the level (21) of the isolating layer (12), thus favoring the contact between these contact studs (18a) and the metallic configuration of interconnections (22). Application in microcircuits having a high integration density.