Abstract: This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA.

Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

Abstract: Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

Abstract: A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

Abstract: Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.

Abstract: A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF.sub.2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.

Abstract: A process is described for fabricating various optical devices including photodiodes in which a protective dielectric layer is put down on the surface of the device prior to heating to temperatures over about 250-300 degrees C. Such devices have excellent performance characteristics including low dark current and low noise figures.

Abstract: A fabrication technique is described for making various devices in which a certain type of glass is used as a surface protection layer. The glass layers are formed by particle bombardment (generally sputtering or E-beam) of a glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures (i.e., in diffusion doping procedures) without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc., and can be removed by standard etching techniques.

Abstract: A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering) of a borosilicate glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

Abstract: Optical communications networks may be implemented by means of a patterned layer of an optically transparent material on a substrate. Where an optical path terminates, e.g., at an on-off switch, it is desirable to optically terminate a waveguide so as to minimize spurious signals due to reflection.The invention provides for optical termination of a waveguide by essentially complete absorption of light. Absorption is effected in a portion of the waveguide which comprises light absorbing centers such as, e.g., carbon or metal particles, anions, cations, or molecules which absorb light at desired wavelengths. Absorbing centers may be comprised in a central portion of a waveguide or, more conveniently, in a portion adjacent to a central portion.

Abstract: Display devices are described in which certain structural features prevent cross-talk effects between individual display elements. This ensures sharp delineation between individual display elements which promotes high contrast and sharp displays. These structural features are particularly advantageous for multiplexed display systems so as to simplify circuit arrangements and ensure sharp, high-contrast displays.

Abstract: Display devices are described which contain organic quinones or diones as active material. These devices exhibit high optical contrast, pleasing and striking colors and unusually low power consumption. Particularly advantageous is the fact that these display devices may exhibit non-linear behavior (sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Abstract: A process is described for producing devices and articles with gold films made by gold evaporation in which certain fluoride compounds are used to insure good adhesion of the gold film to the substrate. The process is particularly applicable to the production of gold films on non-metallic surfaces such as ceramic and glass surfaces. This procedure not only insures better adhesion of the gold film to the surface, but also permits greater processing variations without adversely affecting film adhesion.

Abstract: Display devices are described which contain, in addition to organic quinones and suitable organic solvent, a solid ionic conductor. Such display devices are advantageous because of exceptional persistence of the display. Thus, an image may be retained without application of electrical energy. In addition, these displays exhibit high optical contrast and low power consumption. Under certain conditions, these devices are non-linear (exhibit sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Abstract: Magnetic garnet compositions grown from a novel flux comprising a mixture of Li.sub.2 MoO.sub.4 and R.sub.2 (MoO.sub.4).sub.3 wherein R represents yttrium or a rare earth element having an atomic number from 62 to 71 have appropriate magnetic properties for use in bubble domain devices. Items produced are uniform in composition and may be of submicron thickness.

Abstract: Electrically activated components such as switches, modulators, attenuators, and mode selectors are disclosed which can be used in networks of waveguides in optical communications systems. Disclosed components comprise an electrochromic medium in combination with a suitable ion source and means for producing a variable electric field across the medium. A change of color in the medium in response to variation of the electric field strength is instrumental in influencing direction and intensity of light propagating in a network.

Abstract: An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide bromide or chloride. The electrolyte also contains a substituted ammonium halide such as tetrabutyl ammonium iodide. Such display devices have high contrast, large viewing angle and rapid redissolution of the display.

Abstract: An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide and bromide. The electrolyte also contains an opacifier made up of solid semiconductor substance and solid insulator substance. Such display devices have high contrast, large viewing angle and a pleasing variety of colors including blue, red and brown.

Abstract: Electrically activated optical switches, couplers, and modulators are disclosed which can be incorporated in waveguide networks in optical communications systems. Disclosed devices comprise an electroplating medium in combination with a suitable source of an electric field whose strength can be varied to cause transition of the electroplating medium between plated and unplated states. Changes of reflectivity and refractive index are the bases of switching and coupling applications, respectively.

Abstract: ZnCl.sub.2 optical fibers are advantageously used for transmission of radiation in the infrared portion of the spectrum. Losses as low as 10.sup.-3 dB/km may be obtained when radiation of wavelength between 3.0 and 4.5 microns is transmitted in such fibers. Fabrication techniques allow for the formation of graded fibers to further improve transmission characteristics.