Patents by Inventor Lei-Chun Chou
Lei-Chun Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071834Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Li CHIANG, Chih-Liang CHEN, Tzu-Chiang CHEN, I-Sheng CHEN, Lei-Chun CHOU
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Patent number: 11916077Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.Type: GrantFiled: May 24, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
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Patent number: 11848242Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: GrantFiled: March 28, 2022Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Li Chiang, Chih-Liang Chen, Tzu-Chiang Chen, I-Sheng Chen, Lei-Chun Chou
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Publication number: 20230377941Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.Type: ApplicationFiled: July 25, 2023Publication date: November 23, 2023Inventors: Lei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Patent number: 11810811Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.Type: GrantFiled: July 20, 2022Date of Patent: November 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Lei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Publication number: 20230091869Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.Type: ApplicationFiled: November 7, 2022Publication date: March 23, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang CHEN, Chih-Ming LAI, Ching-Wei TSAI, Charles Chew-Yuen YOUNG, Jiann-Tyng TZENG, Kuo-Cheng CHIANG, Ru-Gun LIU, Wei-Hao WU, Yi-Hsiung LIN, Chia-Hao CHANG, Lei-Chun CHOU
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Patent number: 11532482Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.Type: GrantFiled: February 9, 2021Date of Patent: December 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Lei-Chun Chou, Chih-Liang Chen, Chih-Ming Lai, Charles Chew-Yuen Young, Chin-Yuan Tseng, Hsin-Chih Chen, Shi Ning Ju, Jiann-Tyng Tzeng, Kam-Tou Sio, Ru-Gun Liu, Wei-Cheng Lin, Wei-Liang Lin
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Patent number: 11532751Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.Type: GrantFiled: October 12, 2020Date of Patent: December 20, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang Chen, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Kam-Tou Sio, Shih-Wei Peng, Wei-Cheng Lin, Lei-Chun Chou
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Publication number: 20220367240Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.Type: ApplicationFiled: July 20, 2022Publication date: November 17, 2022Inventors: Lei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Patent number: 11495687Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.Type: GrantFiled: August 24, 2020Date of Patent: November 8, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang Chen, Chih-Ming Lai, Ching-Wei Tsai, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kuo-Cheng Chiang, Ru-Gun Liu, Wei-Hao Wu, Yi-Hsiung Lin, Chia-Hao Chang, Lei-Chun Chou
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Patent number: 11424154Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.Type: GrantFiled: December 9, 2020Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Lei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Publication number: 20220216112Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: ApplicationFiled: March 28, 2022Publication date: July 7, 2022Inventors: Hung-Li CHIANG, Chih-Liang CHEN, Tzu-Chiang CHEN, I-Sheng CHEN, Lei-Chun CHOU
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Patent number: 11289384Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: GrantFiled: December 7, 2020Date of Patent: March 29, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Li Chiang, Chih-Liang Chen, Tzu-Chiang Chen, I-Sheng Chen, Lei-Chun Chou
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Publication number: 20210384351Abstract: A semiconductor device includes a substrate, a dielectric region, a first fin structure, a second fin structure, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The first fin structure protrudes from the substrate and the dielectric region. The second fin structure protrudes from the substrate and the dielectric region, and extends parallel to the first fin structure. The conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and electrically connected to a first conductive region of the plurality of conductive regions. Opposite sides of the first conductive rail face the first fin structure and the second fin structure, respectively. The conductive structure penetrates through the substrate and formed under the first conductive rail, and is electrically connected to the first conductive rail.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Inventors: CHIH-LIANG CHEN, LEI-CHUN CHOU, JACK LIU, KAM-TOU SIO, HUI-TING YANG, WEI-CHENG LIN, CHUN-HUNG LIOU, JIANN-TYNG TZENG, CHEW-YUEN YOUNG
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Patent number: 11121256Abstract: A method for forming a non-planar semiconductor device includes: forming a fin structure protruding from a front side of a substrate of the non-planar semiconductor device; depositing a dielectric region on the front side of the substrate, the dielectric region including a conductive rail buried within the dielectric region and in parallel with the fin structure; etching the dielectric region to create a first opening in the dielectric region to expose the conductive rail; depositing a plurality of conductive regions on the dielectric region, one of the conductive regions contacting the conductive rail through the first opening; etching the substrate from a backside of the substrate to form a second opening to expose the conductive rail; and filling a first conductive material into the second opening to form a through-substrate via in the substrate.Type: GrantFiled: June 5, 2020Date of Patent: September 14, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chih-Liang Chen, Lei-Chun Chou, Jack Liu, Kam-Tou Sio, Hui-Ting Yang, Wei-Cheng Lin, Chun-Hung Liou, Jiann-Tyng Tzeng, Chew-Yuen Young
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Publication number: 20210280607Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang CHEN, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
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Publication number: 20210193504Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.Type: ApplicationFiled: December 9, 2020Publication date: June 24, 2021Inventors: Lei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Publication number: 20210166947Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.Type: ApplicationFiled: February 9, 2021Publication date: June 3, 2021Inventors: Lei-Chun Chou, Chih-Liang Chen, Chih-Ming Lai, Charles Chew-Yuen Young, Chin-Yuan Tseng, Hsin-Chih Chen, Shi Ning Ju, Jiann-Tyng Tzeng, Kam-Tou Sio, Ru-Gun Liu, Wei-Cheng Lin, Wei-Liang Lin
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Patent number: 11018157Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.Type: GrantFiled: June 29, 2018Date of Patent: May 25, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
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Publication number: 20210118745Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: ApplicationFiled: December 7, 2020Publication date: April 22, 2021Inventors: Hung-Li CHIANG, Chih-Liang CHEN, Tzu-Chiang CHEN, I-Sheng CHEN, Lei-Chun CHOU