Abstract: Exemplary semiconductor processing methods may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include a layer of a silicon-containing material. The silicon-containing material may be a silicon-and-carbon-containing material, a silicon-carbon-and-nitrogen-containing material, a silicon-and-nitrogen-containing material, a silicon-and-oxygen-containing material, or silicon material. The methods may include forming plasma effluents of the etchant precursor. The methods may include contacting the substrate with the plasma effluents of the etchant precursor. The contacting may etch a portion of the layer of the silicon-containing material. The processing region may be maintained at a cryogenic temperature while contacting the substrate with the plasma effluents of the etchant precursor.

Abstract: A connector for use with high-speed signals. The connector includes a subassembly having conductors disposed in groups. Some groups include pairs of conductors. Each pair has mating ends having a pitch greater than the respective intermediate portions. The subassembly may include a shielding shell having openings that expose mating ends. The shielding shell has first portions disposed between adjacent conductor groups and separated by the openings, and a second portion joining the first portions. The second portion has a body and contact arms extending from the body and configured to contact a complementary conductive member of a mating component. The contact arms contact the complementary conductive member at locations closer to a distal end of the complementary conductive member than the conductor mating ends. Such a configuration meets signal integrity requirements in connectors designed for 64 Gbps and beyond, while conforming to a standard that constrains mating and mounting interfaces.

Abstract: The present disclosure provides a beam splitter, comprising a beam-splitting layer, an anti-reflective layer and a reflection suppression layer; the beam-splitting layer is located on a side of incident surface of the beam splitter, and configured to change an optical path of a part of the incident light rays; the anti-reflective layer is located on a side of exiting surface of the beam splitter, and configured to reduce light reflection of incident light rays entering the beam splitter; and the reflection suppression layer is located on a reflection path of reflected light rays that are reflected by the anti-reflective layer, and configured to suppress the reflected light rays that are reflected by the anti-reflective layer.

Abstract: A battery module and a battery pack employing the battery module are provided. The battery module includes a cell and a heat-dissipation and pressure-relief component. The heat-dissipation and pressure-relief component is provided with a liquid-cooling partition and a smoke-exhaust and pressure-relief portion. The smoke-exhaust and pressure-relief portion is provided with a pressure-relief channel and an exhaust port communicating with the pressure-relief channel. The liquid-cooling partition is arranged at one side of the pressure-relief channel and is vertically connected to the smoke-exhaust and pressure-relief portion. An explosion-proof valve of the cell is arranged corresponding to the exhaust port, and the cell exchanges heat with the liquid-cooling partition.

Abstract: A miniaturized paddle card assembly that provides high-speed, high-performance transmission. The paddle card has two or more rows of contact pads for mating with complementary conductors, two or more rows of terminals for cable termination, and alternating dielectric layers and metal layers. The two or more rows of terminals are disposed on respective metal layers. Such a configuration enables conductive traces electrically connecting corresponding contact pads and terminals to be substantially straight, and therefore reduces the lengths of the conductive traces. It is also reduced that the size of the paddle card in both a lateral direction parallel to the rows and a longitudinal direction perpendicular to the lateral direction, without changing the thickness of the paddle card. With the paddle card assembly provided herein, the integrity of the signals transmitted therethrough can be maintained and/or improved at higher speed.

Abstract: PSAS 5.0 female connector includes a framework member having a main conductive plastic, a terminal member, and a cover member; the terminal member is inserted in the framework member and includes a SATA 7Pin terminal set having a SATA 7Pin terminal, a plastic frame member, and a SATA 7Pin conductive plastic; the SATA 7Pin terminal is inserted in the plastic frame member, and the SATA 7Pin conductive plastic is engaged on the plastic frame member for fastening the SATA 7Pin terminal in the plastic frame member; the cover member includes a SATA 7Pin outer cover plate stably attached to one side of the plastic frame member and a SATA 7Pin inner cover plate stably attached to another side of the SATA 7Pin conductive plastic. The present invention resolves the insufficiency of transmission rate fulfills multiple high frequency performance.

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about ?20° C. during the semiconductor processing method.

Abstract: A vehicle-mounted interaction content calling control method includes: step S11: the interaction engine receives an interaction content calling request, and queries a corresponding relation between an interaction content stored by the interaction engine and an interaction content calling device in response to the interaction content calling request and according to interaction content ID included in the interaction content calling request to obtain one or more interaction content calling devices corresponding to the interaction content, and an address of the interaction content; and step S12: the interaction engine sends the address of the interaction content to the interaction content calling device for the interaction content calling device to obtain and exhibit the interaction content according to the address of the interaction content.

Abstract: A Peripheral Component Interconnect Express/Serial Attached SCSI (PSAS) female connector includes a frame member, a terminal member, and a cover member; the frame member including a terminal groove disposed in the frame member and a tilt portion disposed in the terminal groove adjacent to a plug end; the terminal member inserted in the frame member and including a Serial Advanced Technology Attachment (SATA) 7 pin terminal, a Serial Attached SCSI (SAS) 40 pin terminal, a 15 Pin signal terminal, a 6 Pin terminal, and a 4 Pin terminal. When the PSAS female connector is engaged with the male connector, the SATA 7 Pin terminal and the SAS 40 Pin terminal are pressed by a terminal of the male connector to be bent toward an outer lateral side of the terminal groove to contact the elastic plate of the cover member. The present invention effectively improves the cross interference during high speed transmission, thereby achieving the Generation 5 performance requirement.

Abstract: The connector provides high performance transmission for high speed signals. The connector includes a subassembly having a subassembly housing holding conductive elements in a row and a shield disposed on the subassembly housing. The subassembly housing includes openings to ground conductive elements. The shield has ribs extending into the openings and contacting the ground conductors. The subassembly can have a second shield disposed closer to a mating face than the shield disposed on the subassembly housing. The second shield is configured to move with the mating ends of the conductive elements when a mating component is inserted into the connector. The connector has a housing with an opening positioned in a moving path of the second shield. Such a configuration meets signal integrity requirements in connectors design for 64 Gbps and beyond, while conforming to a standard that constrains connector physical dimensions.

Abstract: A game control method, a terminal, a device, and a storage medium. The method comprises: configuring an article backpack for storing a virtual article for a target virtual character, an equipment bar for equipping weapons and equipment and a tool bar for equipping a survival tool; in a case that the target virtual character obtains the survival tool, adding the survival tool into the tool bar; and in a case that the target virtual character triggers a target survival project, controlling the target virtual character to complete the target survival project. According to the method, a new operation mode and a new function mode are added to the character, the article storage pressure of the article backpack is effectively reduced, and the frequency of cleaning the article backpack is reduced.

Abstract: A connector for use with high-speed signals. The connector has a housing, which includes conductive elements held in a row by a housing. Each conductive element includes a thinner portion and a thicker portion. The conductive elements are configured to make contact with a mating component at the thicker portions. The thinner portions are closer to mating ends of respective conductive elements than respective thicker portions. The housing is configured to provide voids selectively disposed underneath the conductive elements. Such a configuration increases impedances for the conductive elements at locations that would otherwise have lower impedance and therefore reduces impedance variations along signal transmission paths. Such a configuration can also reduce stub size and therefore reduce insertion loss. Such a configuration meets signal integrity requirements in connectors designed for 64 Gbps and beyond, while conforming to a standard that constrains mating and mounting interfaces.

Abstract: A PCIe/SAS connector structure includes a female part and a male part; the female part is engaged with the male part; wherein the female part has a female plastic member, a female cover, a female signal terminal part, a fix pin and a female signal and power terminal; wherein the male part has a male plastic member, a male cover, a male signal and power terminal, a male terminal, and a fix plate; wherein the female cover is in a full-wrap structure; wherein the female cover has a protruding elastic plate, respectively; wherein the male terminal is formed in an L shape; two male terminals are fixed as a set by a plastic; the male terminal is inserted to be positioned in the male cover; wherein the male cover is formed in an L shape in a full-wrap structure. Interference performance of signal terminal is improved.

Abstract: Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.

Abstract: A connector for use with high-speed signals. The connector includes a connector subassembly that includes conductive elements held in a row by an insulative member. Each conductive element includes a mating end, a mounting end opposite the mating end, and an intermediate portion extending therebetween. The conductive elements include ground conductors dispersed between pairs of signal conductors. The ground conductors are wider than the signal conductors at the intermediate portions, and have same widths as the signal conductors at the ends. For each ground conductor, the intermediate portion has first and second portions separated by a slot until joining each other at the mating end. The insulative member holds the conductive elements at least partially through the slots of the ground conductors. Such a configuration meets signal integrity requirements in connectors designed for 64 Gbps and beyond, while conforming to a standard that constrains mating and mounting interfaces.

Abstract: A connector for use with high-speed signals. The connector includes conductive elements held in a row by an insulative member, a shielding member stacked on the insulative member, and a lossy member stacked on the shielding member and electrically connecting the shielding member to selected ones of the conductive elements. Each conductive element includes a mating end and a mounting end opposite the mating end. The insulative member includes first and second edges extending parallel to the row. The first edge and second edge are closer to the mating ends and mounting ends of the conductive elements, respectively. The shielding member includes a portion projecting from the first edge to provide shielding to the conductive elements beyond the first edge of the insulative member. Such a configuration meets signal integrity requirements in connectors designed for 64 Gbps and beyond, while conforming to a standard that constrains mating and mounting interfaces.

Abstract: A connector for use with high-speed signals. The connector includes a connector subassembly having conductors disposed in groups and a shielding shell at least partially encircling each group. Each conductor includes a mating end and a mounting end opposite the mating end. The shielding shell includes openings that expose contact surfaces of the conductors at the ends. The shielding shell is formed by attaching a second shell part to a first shell part. The first shell part has plateaus and valleys, and the second shell part is attached to the first shell part at the valleys, such that tubular structures are formed. The shielding shell includes contact surfaces disposed on the same planes with the contact surfaces of the conductors at the ends, respectively. Such a configuration meets signal integrity requirements in connectors designed for 64 Gbps and beyond, while conforming to a standard that constrains mating and mounting interfaces.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.

Abstract: A PCIe SAS direct link connector includes a cable end and a back board; the cable end fixed on the back board and including a direct link female head, a high-speed line, and a 15pin plug terminal; the back board including a primary and a secondary cavity position; the direct link female head connected with the high-speed line; the 15pin plug terminal being an asymmetric bow shape and having a short and a long side, a first contact point disposed on the short side, and a second contact point disposed on the long side; the 15pin plug terminal connected with the high-speed line; when the 15pin plug terminal is combined with a server board end connector, the first contact point and the second contact point contact a terminal of the server board end connector, respectively, simplifying the connection structure and improving heat dissipation.

Abstract: Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.