Abstract: The disclosure provides a display panel and a manufacturing method thereof. The method includes: forming a main gate and a sub-gate on a glass substrate, wherein at least a portion of the sub-gate includes a light transmissive area; sequentially forming a gate insulating layer, a semiconductor layer, and a second metal layer on the sub-gate, patterning the semiconductor layer to obtain a main active layer and a sub-active layer, and patterning the second metal layer to obtain a main source/drain and a sub-source/drain.

Abstract: A polycrystalline diamond compact drill bit includes a steel body connector and a matrix crown. The matrix crown is provided with multiple main blades extending axially. A rear end surface of the matrix crown is provided with a connecting block projecting backwardly. A front end surface of the steel body connector is provided with a connecting groove having a shape matching a shape of the connecting block. The connecting block is inserted into the connecting groove to form an interference fit with the connecting groove. The rear end surface and the front end surface are fitted to each other. The periphery of the connecting block is provided with an inner positioning hole. A periphery of the steel body connector is provided with an outer positioning hole penetrating into the connecting groove at a position corresponding to the inner positioning hole.

Abstract: In accordance with embodiments, methods for data communications are disclosed. A device obtains a forward error correction (FEC) encoded bit stream. The device maps the FEC encoded bit stream to produce a set of symbols according to a bit-to-symbol mapping rule. The bit-to-symbol mapping rule comprises a first mapper bit position associated with a first mapper error protection level and a second mapper bit position associated with a second mapper error protection level. The first mapper error protection level is greater than the second mapper error protection level. The device then transmits the set of symbols in the communications system.

Abstract: A polycrystalline diamond compact drill bit is provided according to the present application, including a steel body connector and a matrix crown. The matrix crown is provided with multiple main blades extending axially. A rear end surface of the matrix crown is provided with a connecting block projecting backwardly. A front end surface of the steel body connector is provided with a connecting groove having a shape matching a shape of the connecting block. The connecting block is inserted into the connecting groove to form an interference fit with the connecting groove. The rear end surface and the front end surface are fitted to each other. The periphery of the connecting block is provided with an inner positioning hole. A periphery of the steel body connector is provided with an outer positioning hole penetrating into the connecting groove at a position corresponding to the inner positioning hole.

Abstract: Provided are a display panel, a display device and a display method of the display panel. The display panel includes a pixel array, where the pixel array includes a plurality of pixel groups and each of the plurality of pixels group includes first-type pixel units and second-type pixel units; and a drive circuit configured to provide a drive signal for the pixel array. A display mode of the display panel includes a high-definition display mode in which within one-frame time, the first-type pixel units and the second-type pixel units collectively display a same to-be-displayed picture; a stereoscopic display mode in which the first-type pixel units display a user's left-eye picture within first time and the second-type pixel units display a user's right-eye picture within second time; and a power saving display mode in which the first-type pixel units display a picture and the second-type pixel units do not perform displaying.

Abstract: Disclosed is a heterojunction solar cell with a hole transport layer. The solar cell includes a bottom electrode, a GaAs substrate, an InGaAs epitaxial layer, a hole transport layer, a molybdenum disulfide layer and a top electrode in order from bottom to top; the hole transport layer is a 2,2?,7,7?-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9?-spirobifluorene film. Also disclosed is a preparation method of the heterojunction solar cell with a hole transport layer. The heterojunction solar cell of the present invention not only has simple preparation process and low process cost, but also has high photoelectric conversion efficiency, and the preparation method is an effective method for preparing a novel heterojunction solar cell.

Abstract: Provided are a display panel, a display device and a display method of the display panel. The display panel includes a pixel array, where the pixel array includes a plurality of pixel groups and each of the plurality of pixels group includes first-type pixel units and second-type pixel units; and a drive circuit configured to provide a drive signal for the pixel array. A display mode of the display panel includes a high-definition display mode in which within one-frame time, the first-type pixel units and the second-type pixel units collectively display a same to-be-displayed picture; a stereoscopic display mode in which the first-type pixel units display a user's left-eye picture within first time and the second-type pixel units display a user's right-eye picture within second time; and a power saving display mode in which the first-type pixel units display a picture and the second-type pixel units do not perform displaying.

Abstract: Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

Abstract: Provided are an organic light-emitting display panel and a display device, for improving the light extraction efficiency of OLED display panel. The organic light-emitting display panel includes an array substrate having a plurality of driving elements, and a plurality of organic light-emitting components. Each light-emitting component includes an anode, a cathode and an organic functional layer arranged between the anode and the cathode. The organic functional layer includes a hole transmission region, a light-emitting layer, and an electron transmission region stacked in a sequence from the anode to the cathode. With respect to visible light having a certain wavelength, a refractive index of the light-emitting layer is less than a refractive index of the electron transmission region, and the refractive index of the light-emitting layer is less than a refractive index of the hole transmission region. The above organic light-emitting display panel is applicable to the display device.

Abstract: Provided are an organic light-emitting display panel and a display device. The organic light-emitting display includes an array substrate and organic light-emitting components each having anode, cathode and organic functional layer. The organic functional layer includes an organic light-emitting layer, a first and second electron transmission layer and an electron injection layer. The first electron transmission layer and electron injection layer include a first dopant containing an alkaline earth metal element or a rare earth metal element. A work function ?1 of the electron injection layer and a work function ?2 of the cathode satisfy: ?1<?2, and the work function ?1 of the electron injection layer and a work function ?3 of the first dopant satisfy: ?1??3. LUMO1 and LUMO2 satisfy: |LUMO1?LUMO2|<0.18 eV.

Abstract: Provided are an organic light-emitting display panel and a display device. The organic light-emitting display includes an array substrate and organic light-emitting components each having an anode, a cathode and an organic functional layer. The organic functional layer includes an organic light-emitting layer, a first electron transmission layer, and a hole injection layer. LUMO1 and LUMO4 satisfy: |LUMO1?LUMO4|<1.7 eV. HOMO5 and HOMO4 satisfy: |HOMO5?HOMO4|<1 eV. A work function ?1 of the first dopant and a work function ?4 of the cathode satisfy: ?1<?4, and a work function ?2 of the second dopant and a work function ?3 of the anode satisfy: ?2>?3.

Abstract: Provided are an organic light-emitting display panel and a display device. The organic light-emitting display includes an array substrate and organic light-emitting components each having anode, cathode and organic functional layer. The organic functional layer includes an organic light-emitting layer, a first and second electron transmission layer and an electron injection layer. The first electron transmission layer and electron injection layer include a first dopant containing an alkaline earth metal element or a rare earth metal element. A work function ?1 of the electron injection layer and a work function ?2 of the cathode satisfy: ?1<?2, and the work function ?1 of the electron injection layer and a work function ?3 of the first dopant satisfy: ?1>?3. LUMO1 and LUMO2 satisfy: |LUMO1?LUMO2|<0.18 eV.

Abstract: The present invention discloses an electromagnetic detector and a detection method for detection of interface cracks in a piezoelectric-piezomagnetic laminated structure. The electromagnetic detector for detection of interface crack in a piezoelectric-piezomagnetic laminated structure mainly comprises an eddy current magnetic probe assembly, an automatic scanning frame, a base, a carrier, a servomotor, an X-axis mobile frame driving controller, a Y-axis mobile frame driving controller, a power supply, and a main controller.

Abstract: The present invention d iscloses an electromagnetic detector and a detection method for detection of interface cracks in a piezoelectric-piezomagnetic laminated structure. The electromagnetic detector for detection of interface crack in a piezoelectric-piezomagnetic laminated structure mainly comprises an eddy current magnetic probe assembly, an automatic scanning frame, a base, a carrier, a servomotor, an X-axis mobile frame driving controller, a Y-axis mobile frame driving controller, a power supply, and a main controller.

Abstract: Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As epitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380° C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As expitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380®C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Abstract: Systems and methods for executing a memory dump in a computer system are provided. A trigger event is detected in the computer system. The computer system is configured to detect both a kernel panic and a system hang and to execute memory dump if either of the kernel panic or the system hang is detected. The memory dump is executed in the computer system in response to the detecting of the trigger event. The executing of the memory dump includes storing a current context of the computer system in a portion of a memory device. The current context is stored without reserving the portion prior to the detecting of the trigger event. The computer system is restarted and a bootstrap program is executed, where a running space of the bootstrap program is restricted to the portion of the memory device. The bootstrap program is used to upload the current context to a host device.

Abstract: A connector for a cash box comprises a male connector (20) disposed on the cash box (2) and a female connector (10) disposed on a cash box bracket (1). An elastic element (11) is disposed on the cash box bracket (1) and provides the female connector (10) with a thrust for matching the male connector (20) tightly. The elastic element (11) is further connected with a floating board (14) and provides the floating board (14) with a supporting force along the assembly direction of the cash box (2). A protecting cover device (30) is further disposed on the cash box bracket (1), located over the female connector (10), and comprises a protection cover bracket (31), a resetting torsion spring (33), and a cover body (32). The cover body (32) is pivoted to the protection cover bracket (31) with a shaft (34).

Abstract: Systems and methods for executing a memory dump in a computer system are provided. A trigger event is detected in the computer system. The computer system is configured to detect both a kernel panic and a system hang and to execute memory dump if either of the kernel panic or the system hang is detected. The memory dump is executed in the computer system in response to the detecting of the trigger event. The executing of the memory dump includes storing a current context of the computer system in a portion of a memory device. The current context is stored without reserving the portion prior to the detecting of the trigger event. The computer system is restarted and a bootstrap program is executed, where a running space of the bootstrap program is restricted to the portion of the memory device. The bootstrap program is used to upload the current context to a host device.