Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.

Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.

Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.

Abstract: An electrodialysis cell includes a housing defining an internal chamber, a core positioned within the internal chamber, a first electrode positioned in the internal chamber adjacent the housing, a second electrode coupled to the core and spaced from the first electrode, and a membrane assembly positioned between the first and second electrodes in a spiral wound configuration. The housing includes an inlet end for receiving a feed fluid and an outlet end in fluid communication with the inlet end. The membrane assembly includes a plurality of ion exchange membranes spaced from each other to define a plurality of fluid channels between the inlet and outlet ends.

Abstract: A probe holder used for an ultrasound imaging system, comprising: an upper holding portion, the upper holding portion comprising a first cavity formed by a surrounding an inner surface, an upper end of the first cavity comprising an upper opening, the inner surface contracting inward at a lower end of the first cavity to form a lower opening, and the size of the lower opening being smaller than the size of the upper opening; a lower holding portion, the lower holding portion comprising a second cavity formed by the inner surface passing through the lower opening, the inner surface contracting inward at a lower end of the second cavity to form a bottom opening, and the size of the bottom opening being smaller than the size of the lower opening; and a side opening.

Abstract: The present invention discloses a quick-release tablet protection stand system, relating to the field of electronic product accessories. The quick-release tablet protection stand system comprises a quick-release detachable stand, which is movably installed inside the protective case. The quick-release detachable stand consists of a stand top plate and a stand base plate positioned on one side of the top plate. The stand switch is designed with a push-button mechanism for control, which, compared to the conventional press-button design, reduces the risk of accidental activation. This prevents the sudden collapse of the extended stand due to accidental touches and protects the tablet from tipping over or falling and causing damage, making it safer to use. The shock-absorbing stand is connected to the adjustable mechanism through a docking buckle, docking holes, and locking screws, making assembly and disassembly faster.

Abstract: The present invention discloses a shock-absorbing and magnetic quick release system, which relates to the technical field of electronic product accessories. The system comprises a magnetic quick release mechanism and a shock-absorbing mechanism. The magnetic quick release mechanism comprises a fixing seat and a quick release plate, and the opposite surfaces of the fixing seat and quick release plate are embedded with magnets for attracting each other. The fixing seat has an internal slot. The quick release plate can be separated from the fixing seat by gripping quick release buttons to drive buckles out of locking holes to achieve a quick release. When installing the quick release plate, the magnetic function can directly drive the locking holes to lock the buckles, so the installation is quicker. The shock-absorbing mechanism can help to buffer the vibration transmitted by the magnetic quick release mechanism, reducing potential damages to smart devices.

Abstract: The present invention discloses a quick-release tablet protection stand system, relating to the field of electronic product accessories. The quick-release tablet protection stand system comprises a quick-release detachable stand, which is movably installed inside the protective case. The quick-release detachable stand consists of a stand top plate and a stand base plate positioned on one side of the top plate. The stand switch is designed with a push-button mechanism for control, which, compared to the conventional press-button design, reduces the risk of accidental activation. This prevents the sudden collapse of the extended stand due to accidental touches and protects the tablet from tipping over or falling and causing damage, making it safer to use. The shock-absorbing stand is connected to the adjustable mechanism through a docking buckle, docking holes, and locking screws, making assembly and disassembly faster.

Abstract: A semiconductor device includes a first structure having a first semiconductor layer and a first transistor of a memory cell, a second structure having a second semiconductor layer, a capacitor structure of the memory cell, and a third dielectric stack formed therein, and bonding structures formed between the first structure and the second structure. The bonding structures are configured to couple the first transistor to the capacitor structure to form the memory cell.

Abstract: According to one aspect of the present disclosure, semiconductor device is provided. The semiconductor device may include a plurality of cutting lanes. The plurality of cutting lanes may include at least one first cutting lane. The plurality of cutting lanes may include a plurality of second cutting lanes disposed in parallel with the first cutting lane. The plurality of cutting lanes may include a third cutting lane disposed intersecting the first cutting lane and the second cutting lanes. The semiconductor device may include a plurality of dies defined by the intersection of the plurality of cutting lanes. The semiconductor device may include a die test structure only located in the first cutting lane. Any one of the at least one first cutting lane may be disposed adjacent to at least one of the plurality of second cutting lanes.

Abstract: A memory device includes a stack structure and a channel structure. The stack structure includes interleaved conductive layers and dielectric layers in a first direction. The channel structure extends through the stack structure along the first direction. The channel structure includes a blocking layer, a storage layer, a tunneling layer, and a semiconductor channel stacked along a second direction intersecting the first direction. The dielectric layers extend through the blocking layer, the storage layer, and the tunneling layer along the second direction and are in contact with the semiconductor channel.

Abstract: The embodiments herein relate to support of preferred service provider/producer query for Network Repository Function (NRF). In some embodiments, there proposes a method performed by a first network function implementing a service consumer. In an embodiment, the method may comprise the step of transmitting to a second network function implementing a NRF, a discovery request for discovering one or more third network functions implementing service producers. The discovery request may include a preference indication for indicating whether one or more combined third network functions or one or more standalone third network functions are preferred. The method may further comprise the step of receiving from the second network function a discovery response including information about the discovered one or more third network functions The discovered one or more third network functions may be provided based on the preference indication by the second network function.

Abstract: An automatic support device for resisting rock burst in mines is provided, which includes bases symmetrically distributed, sliding frames are slidably connected to the bases, hydraulic rods are fixedly connected to the bases, and telescopic ends of the hydraulic rods are fixedly connected to the adjacent sliding frames. The sliding frames are fixedly connected to brackets, and the brackets symmetrically distributed are provided with a main support plate, on which pushing rods are provided. The device can slow down the impact force of the device when rock burst occurs in the mine, at the same time, it plays a supporting role in the mine, ensuring the stability of the roof of the mine.

Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.

Abstract: Methods and apparatuses are disclosed for implementing mobile terminating call. According to an embodiment, a subscriber management node obtains, from a mobility management node, an indication that indicates whether a packet switching (PS) connection is currently active for a terminal device. The subscriber management node receives, from a server, a first query about whether a PS access domain is to be used for a terminating call to the terminal device. The subscriber management node sends a response to the server based on the obtained indication.

Abstract: The present invention provides an integrated droplet chip, including a chip body, the chip body has a reaction chamber, a sample adding chamber, droplet generating structure, oil-liquid interface, gas-liquid interface and fluorescence detection area; when the droplet is generated, a pressure difference is formed between the sampling chamber and the gas-liquid interface and between the oil-liquid interface and the gas-liquid interface, and the pressure difference respectively drives a sample in each sample adding chamber and generation oil of the oil-liquid interface to enter the droplet generating structure, so as to generate droplets, which then enter the reaction chamber; and during droplet detection, an external pressure drives detection pushing oil to enter the reaction chamber, such that the droplets flow from the reaction chamber to the droplet generating structure, the external pressure drives detection separation oil to enter the droplet generating structure, and the detection separation oil separates

Abstract: The present invention relates to salt forms of the Pim kinase inhibitor N—{(7R)-4-[(3R,4R,5S)-3-amino-4-hydroxy-5-methylpiperidin-1-yl]-7-hydroxy-6,7-dihydro-5H-cyclopenta[b]pyridin-3-yl}-6-(2,6-difluorophenyl)-5-fluoropyridine-2-carboxamide, including methods of preparation thereof, and intermediates in the preparation thereof, where the compound is useful in the treatment of Pim kinase-related diseases such as cancer.

Abstract: One or more examples relate to a method that includes: applying oversampling to data on a reception datapath of a physical layer; generating a first signal indicating relationships between patterns exhibited by portions of oversampled data and a predetermined pattern; generating a second signal indicating an observed feature of the first signal, the observed feature indicative of a highest relationship between the patterns exhibited by respective portions of oversampled data and the predetermined pattern; and providing the second signal to indicate presence of a portion of data corresponding to the predetermined pattern at a coupled portion of the reception datapath of the physical layer.