Abstract: The present invention discloses a single-wheel electric balancing scooter, comprising a wheel, a driving motor located within the wheel, a battery pack serving as a power supply of the driving motor, a self-balancing control system, and a balance signal sensor. A saddle is provided above the wheel; the saddle is mounted on a rack which is connected and fixed to a fixed shaft of the wheel; a handle is provided on a front side of the wheel, with a lower end of the handle being connected to the rack; and a front end of the rack is connected with an auxiliary wheel rack and an auxiliary wheel is provided at a lower end of the auxiliary wheel rack. The present invention has the following advantages that it is easier for driving and better to control the balance of the scooter body; the scooter body may be dragged on the ground; and the scooter body may be kept upright when not in use.

Abstract: The present invention discloses a single-wheel electric balancing scooter, comprising a wheel, a driving motor located within the wheel, a battery pack serving as a power supply of the driving motor, a self-balancing control system, and a balance signal sensor. A saddle is provided above the wheel; the saddle is mounted on a rack which is connected and fixed to a fixed shaft of the wheel; a handle is provided on a front side of the wheel, with a lower end of the handle being connected to the rack; and a front end of the rack is connected with an auxiliary wheel rack and an auxiliary wheel is provided at a lower end of the auxiliary wheel rack. The present invention has the following advantages that it is easier for driving and better to control the balance of the scooter body; the scooter body may be dragged on the ground; and the scooter body may be kept upright when not in use.

Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.

Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.