Abstract: A method and apparatus for constructing an artificial intelligence application are provided. A specific embodiment of the method includes: acquiring a content description document corresponding to a piece of content provided by a content supplier and a hierarchical relationship between content categories; analyzing the content description document to obtain a content attribute, and constructing an operation description template based on the hierarchical relationship between the content categories, or the content attribute; binding the operation description template to a preset interface of an operation type of an operation described by the operation description template; and constructing an artificial intelligence application using the operation description template and the preset interface bound to the operation description template.

Abstract: A system, computer-readable storage medium storing at least one program, and a computer-implemented method for re-ranking ranked search results is presented. Ranked search results satisfying a search query are obtained, where the ranked search results include a first search result corresponding to a first document associated with a first entity and a second search result corresponding to a second document associated with a second entity, and where the first search result is ranked higher than the second search result. The first document and the second document are determined to satisfy a similarity criterion. The second entity is determined to satisfy a predefined authorship differential with respect to the first entity. Responsive to determining that the second entity satisfies the predefined authorship differential with respect to the first entity, the second search result and the first search result in the ranked search results are swapped to produce re-ranked search results.

Abstract: A system, computer-readable storage medium storing at least one program, and a computer-implemented method for re-ranking ranked search results is presented. Ranked search results satisfying a search query are obtained, where the ranked search results include a first search result corresponding to a first document associated with a first entity and a second search result corresponding to a second document associated with a second entity, and where the first search result is ranked higher than the second search result. The first document and the second document are determined to satisfy a similarity criterion. The second entity is determined to satisfy a predefined authorship differential with respect to the first entity. Responsive to determining that the second entity satisfies the predefined authorship differential with respect to the first entity, the second search result and the first search result in the ranked search results are swapped to produce re-ranked search results.

Abstract: An electronic product, including: a housing, where an air vent is disposed on the housing; a PCB board that is located inside the housing, where a positive electrode and a negative electrode of a power supply are disposed on the PCB board; a fan that is located between the PCB board and the housing; and a switch bar that is located between the fan and the housing and is connected to the housing in a sliding manner, where the switch bar has a first state and a second state, where the switch bar includes a conductive area, when the switch bar is set to the first state, the conductive area is electrically connected to the positive electrode and the negative electrode of the power supply on the PCB board, the fan starts to run.

Abstract: A refrigeration system is described having a main refrigeration system containing a main refrigerant and a separate, secondary refrigeration system containing a secondary refrigerant. In flow sequence in the main refrigerating system, an outlet of a main compressor is flow connected to a main condenser; the main condenser is flow connected to a pre-metering device; the pre-metering device is flow connected to an inlet to a cooling path within a secondary evaporator within the secondary refrigeration system; an outlet of the cooling path is flow connected to a main metering device; and the main metering device is flow connected to a main evaporator. The main evaporator is flow connected back to an inlet of the main compressor forming the complete circuit main refrigeration system.

Abstract: A reflective mobile phone lens, comprising a semi-permeable semi-reflecting mirror (5), a concave spherical reflecting mirror (4) and a mobile phone (1) screen; the mobile phone (1) screen serves as a display screen to display an image; light passes through the semi-permeable semi-reflecting mirror (5) and arrives at the concave spherical reflecting mirror (4), and then is reflected by the concave spherical reflecting mirror (4) back to the semi-permeable semi-reflecting mirror (5), and is reflected by the reflective surface of the semi-permeable semi-reflecting mirror (5) onto the mobile phone (1) screen. The mobile phone lens enables watching an online movie or playing a virtual reality game on the mobile phone (1) to have a good effect like watching a movie on a big screen in a cinema.

Abstract: Example aspects of the present disclosure are directed to processing voice commands or utterances. For instance, data indicative of a voice utterance can be received. A device topology representation can be accessed. The device topology representation can define a plurality of smart devices associated with one or more structures. The device topology representation can further define a location of each of the plurality of devices within the associated structures. A transcription of the voice utterance can be determined based at least in part on the device topology representation. One or more selected devices and one or more actions to be performed by the one or more selected devices can be determined based at least in part on the determined transcription and the device topology representation.

Abstract: An example method includes receiving, by a computational assistant executing at one or more processors, a representation of an utterance spoken at a computing device; identifying, based on the utterance, a task to be performed; determining a capability level of a first party (1P) agent to perform the task; determining capability levels of respective third party (3P) agents of a plurality of 3P agents to perform the task; responsive to determining that the capability level of the 1P agent does not satisfy a threshold capability level, that a capability level of a particular 3P agent of the plurality of 3P agents is a greatest of the determined capability levels, and that the capability level of the particular 3P agent satisfies the threshold capability level, selecting the particular 3P agent to perform the task; and performing one or more actions determined by the selected agent to perform the task.

Abstract: An inspection system that includes charged particle optics that irradiate a bottom of a hole with a charged particle beam propagated along an optical axis, an energy dispersive x-ray detector and a processor. The x-ray detector detects x-ray photons emitted from the bottom of the hole and generates detection signals indicative of the x-ray photons. The processor processes the detection signals to provide an estimate of the bottom of the hole.

Abstract: An electronic product, including: a housing, where an air vent is disposed on the housing; a PCB board that is located inside the housing, where a positive electrode and a negative electrode of a power supply are disposed on the PCB board; a fan that is located between the PCB board and the housing; and a switch bar that is located between the fan and the housing and is connected to the housing in a sliding manner, where the switch bar has a first state and a second state, where the switch bar includes a conductive area, when the switch bar is set to the first state, the conductive area is electrically connected to the positive electrode and the negative electrode of the power supply on the PCB board, the fan starts to run.

Abstract: A semiconductor device includes a P-type semiconductor substrate, an N-well and a P-well disposed adjacent to each other and extending along a first direction within the P-type semiconductor substrate, a first N+ doped region and a first P+ doped region extending along the first direction within the N-well and spaced away from each other along a second direction perpendicular to the first direction, a second N+ doped region and a second P+ doped region extending along the first direction within the P-well and spaced away from each other along the second direction, and a plurality of third N+ doped regions and a plurality of P+ doped regions alternatively disposed in a junction region formed between the N-well and P-well the third N+ doped regions. The third N+ doped regions and the third P+ doped regions form a Zener diode.

Abstract: An analysis system that includes a processor and an memory module; wherein the memory module is arranged to store aerial images of an area of a mask, each aerial image corresponds to focus value out of a set of different focus values; wherein the processor is arranged to find weak points by processing the aerial images using different printability thresholds; and wherein the processor is arranged to determine focus and exposure values for generating a Process Window Qualification (PWQ) wafer to be manufactured using the mask in response to focus and exposure values associated with the weak points.

Abstract: A semiconductor device may include the following elements: a first n-type region; a second n-type region; a p-type region, which directly contacts each of the first n-type region and the second n-type region; a first p-type portion, which directly contacts the first n-type region; a first n-type portion, which directly contacts each of the first n-type region and the p-type region; a first electrode, which is electrically connected to each of the first p-type portion and the first n-type portion; a second p-type portion, which directly contacts the second n-type region; a second n-type portion, which directly contacts each of the second n-type region and the p-type region; and a second electrode, which is electrically connected to each of the second p-type portion and the second n-type portion.

Abstract: A semiconductor device includes a P-type semiconductor substrate, a first N-well, a second N-well, and a P-well adjoining the first and second N-wells, a first doped region having a first conductivity type within the first N-well, a second doped region having a second conductivity type bridging the first N-well and the P-well, a third N+ doped region bridging the second N-well and the P-well, a fourth P+ doped region within the second N-well and spaced apart from the third N+ doped region, and a gate structure formed on the surface of the P-well and between the second doped region and the third N+ doped region. The gate structure, the second doped region, and the third N+ doped region form an NMOS structure. The semiconductor device is a low voltage triggered SCR having a relatively small silicon area and high holding voltage.

Abstract: The present invention relates to a method for detecting performance of an APU starter, comprising: obtaining APU-related messages at multiple time points within one time period; obtaining running parameters of the APU starter according to the messages, the running parameters comprise starting time STA; calculating average value AVG and deviation index ? of the starting time within said time period; determining whether performance of the APU starter is in a stable phase, decline phase or failure phase according to the deviation index ?.

Abstract: A semiconductor device includes a P-type semiconductor substrate, a first N-well, a second N-well, and a P-well adjoining the first and second N-wells, a first doped region having a first conductivity type within the first N-well, a second doped region having a second conductivity type bridging the first N-well and the P-well, a third N+ doped region bridging the second N-well and the P-well, a fourth P+ doped region within the second N-well and spaced apart from the third N+ doped region, and a gate structure formed on the surface of the P-well and between the second doped region and the third N+ doped region. The gate structure, the second doped region, and the third N+ doped region form an NMOS structure. The semiconductor device is a low voltage triggered SCR having a relatively small silicon area and high holding voltage.

Abstract: A reflective mobile phone lens, comprising a semi-permeable semi-reflecting mirror (5), a concave spherical reflecting mirror (4) and a mobile phone (1) screen; the mobile phone (1) screen serves as a display screen to display an image; light passes through the semi-permeable semi-reflecting mirror (5) and arrives at the concave spherical reflecting mirror (4), and then is reflected by the concave spherical reflecting mirror (4) back to the semi-permeable semi-reflecting mirror (5), and is reflected by the reflective surface of the semi-permeable semi-reflecting mirror (5) onto the mobile phone (1) screen. The mobile phone lens enables watching an online movie or playing a virtual reality game on the mobile phone (1) to have a good effect like watching a movie on a big screen in a cinema.

Abstract: A semiconductor device includes a P-type semiconductor substrate, an N-well and a P-well disposed adjacent to each other and extending along a first direction within the P-type semiconductor substrate, a first N+ doped region and a first P+ doped region extending along the first direction within the N-well and spaced away from each other along a second direction perpendicular to the first direction, a second N+ doped region and a second P+ doped region extending along the first direction within the P-well and spaced away from each other along the second direction, and a plurality of third N+ doped regions and a plurality of P+ doped regions alternatively disposed in a junction region formed between the N-well and P-well the third N+ doped regions. The third N+ doped regions and the third P+ doped regions form a Zener diode.

Abstract: A semiconductor device may include the following elements: a first n-type region; a second n-type region; a p-type region, which directly contacts each of the first n-type region and the second n-type region; a first p-type portion, which directly contacts the first n-type region; a first n-type portion, which directly contacts each of the first n-type region and the p-type region; a first electrode, which is electrically connected to each of the first p-type portion and the first n-type portion; a second p-type portion, which directly contacts the second n-type region; a second n-type portion, which directly contacts each of the second n-type region and the p-type region; and a second electrode, which is electrically connected to each of the second p-type portion and the second n-type portion.