Abstract: Areas of a semiconductor substrate where semiconductor devices are not to be formed are filled in with dummy active areas. Whole dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, and partial dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, but where whole dummy active areas can not be accommodated. The dummy active areas are staggered so as to provide uniform parasitic capacitive coupling to overlying leads regardless of the placement of the leads. The dummy active areas are substantially evenly separated from one another by dividers. The dummy active areas and dividers are formed concurrently with formation of semiconductor devices in non-dummy active areas. The dummy active areas mitigate yield loss by, among other things, providing more uniformity across the substrate, at least with regard to parasitic capacitances and stress and subsequent processing.

Abstract: Areas of a semiconductor substrate where semiconductor devices are not to be formed are filled in with dummy active areas. Whole dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, and partial dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, but where whole dummy active areas can not be accommodated. The dummy active areas are staggered so as to provide uniform parasitic capacitive coupling to overlying leads regardless of the placement of the leads. The dummy active areas are substantially evenly separated from one another by dividers. The dummy active areas and dividers are formed concurrently with formation of semiconductor devices in non-dummy active areas. The dummy active areas mitigate yield loss by, among other things, providing more uniformity across the substrate, at least with regard to parasitic capacitances and stress and subsequent processing.

Abstract: Silicon carbide is used for a hardmask for the isolation dielectric etch and also serves as an etch stop for chemical-mechanical polishing. Alternatively, silicon carbonitride or silicon carboxide can be used.

Abstract: An inlaid interconnect fabrication method using a silicon carbide polish stop layer for protection of mechanically weak dielectric such as porous silicon dioxide (xerogel) during chemical mechanical polishing.

Abstract: Silicon carbide (SiC) is used as the stop layer for the chemical-mechanical polishing used to planarize the surface of interlevel dielectrics, making the resistance of the vias more uniform. Alternatively, silicon carbonitride or silicon carboxide can be used in place of silicon carbide.