Abstract: A method for subjecting a surface of a substrate to successive surface reactions of precursors according to the principles of atomic layer deposition includes subjecting the surface of the substrate to the first precursor in a first precursor zone and subjecting the surface of the substrate to the second precursor in a second precursor zone, changing the first precursor in the first precursor zone to a subsequent precursor which is different than the first and second precursors, subjecting the surface of the substrate to the subsequent precursor in the first precursor zone, and subjecting the surface of the substrate to the second precursor in the second precursor zone.

Abstract: A method and apparatus for subjecting a surface of a substrate to successive surface reactions of precursors according to the principles of atomic layer deposition. The method including subjecting the surface of the substrate to the first precursor in a first precursor zone and subjecting the surface of the substrate to the second precursor in a second precursor zone. The method further includes changing the first precursor in the first precursor zone to a subsequent precursor which is different than the first and second precursors and subjecting the surface of the substrate to the subsequent precursor in the first precursor zone and subjecting the surface of the substrate to the second precursor in the second precursor zone.

Abstract: An apparatus for processing two or more substrates in a batch process by subjecting at least part of the surface of the substrates to alternating surface reactions of at least a first and a second precursor. The apparatus includes: multiple substrate holders for supporting the substrates, and a reaction chamber that includes a reaction space for depositing material on the surface of the substrates during a processing phase. The substrate holders are installed or arranged to be installed inside the reaction chamber for processing of the substrates inside the reaction chamber during the processing phase. During a loading phase in which the substrates are loaded to the substrate holders by a loading device, at least some of the substrate holders are arranged to be movable relative to each other.

Abstract: The invention relates to an apparatus and to a method for providing an ALD coating to a surface of a substrate. The apparatus includes at least one ALD coating unit for coating the surface of the substrate, a first reel for unwinding the substrate to be coated, a second reel for rewinding the coated substrate, one or more primary support structures provided on the same side of the substrate as the surface to be coated or the coated surface for forming a substrate transport path from the first reel through the at least one primary support structure to the second reel, and an interleave web in connection with each of the one or more primary support structures.

Abstract: The invention relates to an apparatus for processing a surface of a substrate by atomic layer deposition and to a method for operating the apparatus. The apparatus includes a deposition chamber and one or more lead-through connections provided between one or more side chambers and the deposition chamber. The one or more lead through connections includes one or more lead-through chambers and a secondary pressure device operatively connected to the one or more lead-through chambers.

Abstract: The invention relates to an apparatus and to a method for providing an ALD coating to a surface of a substrate. The apparatus includes at least one ALD coating unit for coating the surface of the substrate, a first reel for unwinding the substrate to be coated, a second reel for rewinding the coated substrate, one or more primary support structures provided on the same side of the substrate as the surface to be coated or the coated surface for forming a substrate transport path from the first reel through the at least one primary support structure to the second reel, and an interleave web in connection with each of the one or more primary support structures.

Abstract: The invention relates to an apparatus and nozzle head for processing a surface of a substrate. The apparatus includes a substrate support mechanism for supporting the substrate on a substrate support plane in a process zone, a nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor and a nozzle head support mechanism for supporting the nozzle head at a predetermined distance from the substrate support plane. The nozzle head support mechanism includes a nozzle head support surface and, that the nozzle head is supported to the nozzle head support surface.

Abstract: An apparatus for processing two or more substrates in a batch process by subjecting at least part of the surface of the substrates to alternating surface reactions of at least a first and a second precursor. The apparatus includes: multiple substrate holders for supporting the substrates, and a reaction chamber that includes a reaction space for depositing material on the surface of the substrates during a processing phase. The substrate holders are installed or arranged to be installed inside the reaction chamber for processing of the substrates inside the reaction chamber during the processing phase. During a loading phase in which the substrates are loaded to the substrate holders by a loading device, at least some of the substrate holders are arranged to be movable relative to each other.

Abstract: The invention relates to an apparatus and nozzle head for processing a surface of a substrate. The apparatus includes a substrate support mechanism for supporting the substrate on a substrate support plane in a process zone, a nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor and a nozzle head support mechanism for supporting the nozzle head at a predetermined distance from the substrate support plane. The nozzle head support mechanism includes a nozzle head support surface and, that the nozzle head is supported to the nozzle head support surface.

Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.

Abstract: The invention relates to a reaction chamber of an ALD reactor which comprises a bottom wall, a top wall and side walls extending between the bottom wall and the top wall which define an inner portion (28) of the reaction chamber. The reactor further comprises one or more feed openings (30) for feeding gas into the reaction chamber and one or more discharge openings (40, 50) for discharging gas fed into the reactor from the reaction chamber. The reaction chamber is characterized in that each side wall of the reaction chamber comprises one or more feed openings (30), in which case all side walls of the reaction chamber participate in gas exchange.

Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infred channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.

Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.

Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.

Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.