Abstract: A testing device (100) is for electrically testing integrated circuits on a wafer (102). The testing device (100) includes a vacuum chamber (109), a chuck (101) for holding the wafer (102), a probe card (103) for electrically contacting the integrated circuits, and a radiation shield (107) arranged inside the vacuum chamber (109) and enclosing the chuck (101) and the probe card (103). In the testing device (100), the vacuum chamber (109) is provided with a gate valve (123), the radiation shield (107) is provided with a hatch (122), and the testing device (100) includes a wafer loading assembly (125) for loading the wafer (102) onto the chuck (101) through the gate valve (123) and the hatch (122).

Abstract: The present invention provides a testing device for electrically testing integrated circuits on a wafer. The testing device comprises a vacuum chamber, a chuck for holding the wafer, a probe card for electrically contacting the integrated circuits, means for moving the chuck relative to the probe card, a first radiation shield arranged inside the vacuum chamber and enclosing the chuck and the probe card, and a cooling unit thermally connected to the first radiation shield. The means for moving the chuck relative to the probe card comprises a supporting column having a first end and a second end, the first end of the supporting column being attached to the chuck, and the first radiation shield comprises a first fixed part having a first aperture through which the supporting column is arranged to pass, and a first movable part that is attached to the supporting column and arranged to cover the first aperture.

Abstract: The present invention provides a testing device for electrically testing integrated circuits on a wafer. The testing device comprises a vacuum chamber, a chuck for holding the wafer, a probe card for electrically contacting the integrated circuits, and a radiation shield arranged inside the vacuum chamber and enclosing the chuck and the probe card. In the testing device, the vacuum chamber is provided with a gate valve, the radiation shield is provided with a hatch, and the testing device comprises a wafer loading assembly for loading the wafer onto the chuck through the gate valve and the hatch.

Abstract: The present invention provides a testing device for electrically testing integrated circuits on a wafer. The testing device comprises a vacuum chamber, a chuck for holding the wafer, a probe card for electrically contacting the integrated circuits, means for moving the chuck relative to the probe card, a first radiation shield arranged inside the vacuum chamber and enclosing the chuck and the probe card, and a cooling unit thermally connected to the first radiation shield. The means for moving the chuck relative to the probe card comprises a supporting column having a first end and a second end, the first end of the supporting column being attached to the chuck, and the first radiation shield comprises a first fixed part having a first aperture through which the supporting column is arranged to pass, and a first movable part that is attached to the supporting column and arranged to cover the first aperture.

Abstract: A MEMS-sensor structure comprising first means and second means coupled for double differential detection and positioned symmetrically to provide quantities for the double differential detection in a phase shift. If the sensor deforms, due to a specifically symmetric positioning of the first and second means, the effect of the displacement is at least partly eliminated.

Abstract: A MEMS-sensor structure comprising first means and second means coupled for double differential detection and positioned symmetrically to provide quantities for the double differential detection in a phase shift. If the sensor deforms, due to a specifically symmetric positioning of the first and second means, the effect of the displacement is at least partly eliminated.

Abstract: A MEMS-sensor structure comprising first means and second means coupled for double differential detection and positioned symmetrically to provide quantities for the double differential detection in a phase shift. If the sensor deforms, due to a specifically symmetric positioning of the first and second means, the effect of the displacement is at least partly eliminated.

Abstract: A device (100) harvests energy from vibration and/or strain and utilizes both capacitive (102a, 102b) and piezoelectric elements (105). The principle of operation is out-of-plane capacitive harvester, where the bias voltage for the capacitive element is generated with a piezoelectric element (105). The device utilizes a thin dielectric film (104) between the capacitor plates (102a, 102b) maximizing the harvested energy and enabling the harvester operation in semi-contact mode so that short circuits are prevented. For example when utilized in a wheel or the like, the capacitor is closed and opened at every strike or every turn of a wheel being thus independent of the harvester's mechanical resonance frequency.

Abstract: A device (100) harvests energy from vibration and/or strain and utilises both capacitive (102a, 102b) and piezo-electric elements (105). The principle of operation is out-of-plane capacitive harvester, where the bias voltage for the capacitive element is generated with a piezoelectric element (105). The device utilizes a thin dielectric film (104) between the capacitor plates (102a, 102b) maximizing the harvested energy and enabling the harvester operation in semi-contact mode so that short circuits are prevented. For example when utilised in a wheel or the like, the capacitor is closed and opened at every strike or every turn of a wheel being thus independent of the harvester's mechanical resonance frequency.

Abstract: The invention is a sensitive measuring instrument, which is principally applied to quantum computation, especially to measurement of quantum bits consisting of superconducting micro and nano-structures. The state of a quantum bit is expressed as the voltage-time integral over a circuit component. Phase measurement is performed by measuring the capacitance of a single-electron transistor between the gate and ground.

Abstract: The invention is a sensitive measuring instrument, which is principally applied to quantum computation, especially to measurement of quantum bits consisting of superconducting micro and nano-structures. The state of a quantum bit is expressed as the voltage-time integral over a circuit component. Phase measurement is performed by measuring the capacitance of a single-electron transistor between the gate and ground.