Patents by Inventor Leila Elvira Noriega

Leila Elvira Noriega has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP process for processing STI on two distinct silicon planes
    Patent number: 8551886
    Abstract: A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: October 8, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Kyle P. Hunt, Leila Elvira Noriega, Billy Alan Wofford, Asadd M. Hosein, Binghua Hu, Xinfen Chen
  • CMP PROCESS FOR PROCESSING STI ON TWO DISTINCT SILICON PLANES
    Publication number: 20090170317
    Abstract: A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.
    Type: Application
    Filed: April 9, 2008
    Publication date: July 2, 2009
    Applicant: Texas Instruments Incorporated
    Inventors: Kyle P. Hunt, Leila Elvira Noriega, Billy Alan Wofford, Asadd M. Hosein, Binghua Hu, Xinfen Chen