Patents by Inventor Lein-Hsing Lin

Lein-Hsing Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5706032
    Abstract: The present invention discloses an amendable static RAM, which can be modified from a high-priced corrupt 32K.times.36 one to a correctly functioning 32K.times.32 one. In each memory block, at least a common sense amplifier is employed as an amendable local sense amplifier. Each amendable local sense amplifier is coupled to a corresponding amendable common sense amplifier and by a switching circuit following the amendable common sense amplifier to all I/O buffers in the same memory block. When the static RAM works well and does not require amendment, the switching circuit is set to a normal condition that the amendable common sense amplifier is coupled to a corresponding amendable I/O buffers. When the static RAM is corrupt and requires modification, the switching circuit is set to an amendable condition wherein the amendable common sense amplifier is coupled to a normal I/O buffer corresponding to the corrupt memory column.
    Type: Grant
    Filed: December 15, 1995
    Date of Patent: January 6, 1998
    Assignee: United Microelectronics Corporation
    Inventors: Hsiao-Yueh Chang, Lein-Hsing Lin