Abstract: A method is described for making terminal pads, and more particularly solderable bump terminals on a plurality of semiconductor devices formed in a silicon wafer. Two spaced aluminum layers have electrical connection to the P-type region and the N-type region, respectively, of a PN junction of each device. A permanent protective glass layer is deposited over the active face of the wafer, having holes opened over the terminal pads. The wafer is covered with a temporary insulative masking layer except over terminal pad portions of the two aluminum layers, respectively. The wafer is submersed in a zinc plating solution and subsequently in a nickel plating solution to form a nickel bump on the terminal pad portions. A dark environment is provided about the PN junctions to avoid deplating aluminum from some of the aluminum pads due to photo-electric currents in the immersion solution.