Abstract: An accurate, cost-efficient temperature sensor may be integrated into an integrated circuit (IC) using common materials as the IC's interconnect metallization. The temperature sensor may include an impedance element having a length of metal made of the interconnect metal, a current source connected between a first set of contacts at opposite ends of the impedance element, and an analog-to-digital converter connected between a second set of contacts at opposite ends of the impedance element. The temperature sensor may exploits the proportional relationship between the metal's resistance and temperature to measure ambient temperature. Alternatively, such a temperature sensor may be used on disposable chemical sensors where the impedance element is made of a common metal as conductors that connect a sensor reactant to sensor contacts. In either case, because the impedance element is formed of a common metal as other interconnect, it is expected to incur low manufacturing costs.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.

Abstract: An accurate, cost-efficient temperature sensor may be integrated into an integrated circuit (IC) using common materials as the IC's interconnect metallization. The temperature sensor may include an impedance element having a length of metal made of the interconnect metal, a current source connected between a first set of contacts at opposite ends of the impedance element, and an analog-to-digital converter connected between a second set of contacts at opposite ends of the impedance element. The temperature sensor may exploits the proportional relationship between the metal's resistance and temperature to measure ambient temperature. Alternatively, such a temperature sensor may be used on disposable chemical sensors where the impedance element is made of a common metal as conductors that connect a sensor reactant to sensor contacts. In either case, because the impedance element is formed of a common metal as other interconnect, it is expected to incur low manufacturing costs.