Patents by Inventor Lekai Chen

Lekai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230223466
    Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.
    Type: Application
    Filed: December 1, 2021
    Publication date: July 13, 2023
    Inventors: Mingxiang Wang, Lekai Chen, Dongli Zhang, Huaisheng Wang