Abstract: A method for controlling a computer chip including a CPU and a ROM includes: reading a first target code from the ROM of the chip, identifying whether the first target code is an exception code, and in response to the first target code being the exception code, not executing the first target code, reading a second target code from a set storage space of the chip, and executing the second target code.

Abstract: According to embodiments of the disclosure, a method, apparatus, device and storage medium for task processing are provided. In the method, a target task to be executed at a target device is determined based on an interaction between a user and a digital assistant. The digital assistant runs on the target device. In response to determining that the target task is associated with a target application on the target device, the availability of the target application is determined. The availability indicates whether the digital assistant is permitted to execute the target task using the target application. Further, feedback information for the target task is determined based on the availability of the target application. In this way, the efficiency of the digital assistant in assisting users can be improved.

Abstract: Disclosed in the present invention are a program download method for an intelligent terminal and an intelligent terminal. The program download method for an intelligent terminal comprises the following steps: identifying a memory card identifier of an intelligent terminal, the memory card identifier being used for representing the type of a memory card of the intelligent terminal; obtaining a target configuration file, the target configuration file being a configuration file corresponding to the memory card identifier; and downloading the target configuration file to the intelligent terminal. In the present invention, the type of the memory card of the intelligent terminal can be automatically identified, such that the corresponding target configuration file is automatically obtained according to the type of the memory card so as to configure the intelligent terminal, and thus, the intelligent terminal can normally access the memory card. This solution achieves effective and accurate download configuration.

Abstract: Disclosed in the present invention are a program download method for an intelligent terminal and an intelligent terminal. The program download method for an intelligent terminal comprises the following steps: identifying a memory card identifier of an intelligent terminal, the memory card identifier being used for representing the type of a memory card of the intelligent terminal; obtaining a target configuration file, the target configuration file being a configuration file corresponding to the memory card identifier; and downloading the target configuration file to the intelligent terminal. In the present invention, the type of the memory card of the intelligent terminal can be automatically identified, such that the corresponding target configuration file is automatically obtained according to the type of the memory card so as to configure the intelligent terminal, and thus, the intelligent terminal can normally access the memory card. This solution achieves effective and accurate download configuration.

Abstract: A method for providing real-time three-dimensional facial animation from video is provided. The method includes collecting images of a subject, and forming a three-dimensional mesh for the subject based on a facial expression factor and a head pose of the subject extracted from the images of the subject. The method also includes forming a texture transformation based on an illumination parameter associated with an illumination configuration for the images from the subject, forming a three-dimensional model for the subject based on the three-dimensional mesh and the texture transformation, determining a loss factor based on selected points in a test image from the subject and a rendition of the test image by the three-dimensional model, and updating the three-dimensional model according to the loss factor. A system and a non-transitory, computer-readable medium storing instructions to perform the above method are also provided.

Abstract: A method for providing real-time three-dimensional facial animation from video is provided. The method includes collecting images of a subject, and forming a three-dimensional mesh for the subject based on a facial expression factor and a head pose of the subject extracted from the images of the subject. The method also includes forming a texture transformation based on an illumination parameter associated with an illumination configuration for the images from the subject, forming a three-dimensional model for the subject based on the three-dimensional mesh and the texture transformation, determining a loss factor based on selected points in a test image from the subject and a rendition of the test image by the three-dimensional model, and updating the three-dimensional model according to the loss factor. A system and a non-transitory, computer-readable medium storing instructions to perform the above method are also provided.

Abstract: A semiconductor device is disclosed. The device includes a plurality of gates formed on a surface of a substrate, a plurality of sidewalls formed on side surfaces of the gates, a Sigma-shaped recess formed in the substrate between adjacent gates, a SiGe seed layer formed on an inner surface of the Sigma-shaped recess, boron-doped bulk SiGe formed on a surface of the SiGe seed layer, with the boron-doped bulk SiGe filling the Sigma-shaped recess, and a boron-doped SiGe regeneration layer formed in a first recess beneath the surface of the substrate. The first recess is formed by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.

Abstract: A semiconductor device is disclosed. The device includes a plurality of gates formed on a surface of a substrate, a plurality of sidewalls formed on side surfaces of the gates, a Sigma-shaped recess formed in the substrate between adjacent gates, a SiGe seed layer formed on an inner surface of the Sigma-shaped recess, boron-doped bulk SiGe formed on a surface of the SiGe seed layer, with the boron-doped bulk SiGe filling the Sigma-shaped recess, and a boron-doped SiGe regeneration layer formed in a first recess beneath the surface of the substrate. The first recess is formed by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.

Abstract: A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gates on a surface of a substrate, forming sidewalls on side surfaces of the gates, forming a Sigma-shaped recess in the substrate between adjacent gates, forming a SiGe seed layer on an inner surface of the Sigma-shaped recess, forming bulk SiGe doped with boron on a surface of the SiGe seed layer, and filling the Sigma-shaped recess with the boron-doped bulk SiGe, forming a first recess by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and forming a SiGe regeneration layer in the first recess beneath the surface of the substrate, wherein the SiGe regeneration layer is doped with boron, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.

Abstract: A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gates on a surface of a substrate, forming sidewalls on side surfaces of the gates, forming a Sigma-shaped recess in the substrate between adjacent gates, forming a SiGe seed layer on an inner surface of the Sigma-shaped recess, forming bulk SiGe doped with boron on a surface of the SiGe seed layer, and filling the Sigma-shaped recess with the boron-doped bulk SiGe, forming a first recess by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and forming a SiGe regeneration layer in the first recess beneath the surface of the substrate, wherein the SiGe regeneration layer is doped with boron, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.