Abstract: An integrated process is shown for the fabrication of one or more of the following devices: (n-) and (p-) channel low-voltage field-effect logic transistors (556/403); (n-) and (p-) channel high-voltage insulated-gate field-effect transistors (557, 405) for the gating of an EEPROM memory array or the like; a Fowler-Nordheim tunneling EEPROM cell (558); (n-) and (p-) channel drain-extended insulated-gate field-effect transistors (407, 560); vertical and lateral annular DMOS transistors (409, 561); a Schottky diode (411); and a FAMOS EPROM cell (562). A "non-stack" double-level poly EEPROM cell (676) with enhanced reliability (676) is also disclosed.

Abstract: One embodiment of the present invention is a gated thyristor formed at a face of semiconductor layer of a first conductivity type, comprising: a first well formed at the face to be of a second conductivity type opposite the first conductivity type; a second well of a first conductivity type formed at the face to be enclosed by the first well; an emitter region of the second conductivity type formed at the face to be enclosed by the second well; first and second highly doped regions formed at the face to be of the first conductivity type, the first highly doped region formed within the first well and the second highly doped region formed in the first well and at least partially within the second well, a subregion of the first well spacing apart the first and second highly doped regions and operable to act as a base of a first bipolar transistor; third, fourth and fifth highly doped regions formed at the face to be of the second conductivity type, the third and fourth highly doped regions spaced from the first

Abstract: The invention relates to a field-effect transistor (1;20) with insulated gate electrode (9;30) which comprises in a semiconductor body (5) a drain diffusion zone (2) connected to a drain electrode (6;32) and a source diffusion zone (3) which is disposed spaced from the drain diffusion zone (2) for forming a channel zone (4) and which is connected to a source electrode (7). The gate electrode (9;32) of said field-effect transistor is disposed on a gate insulating layer (8) over the channel zone (4). For protecting the transistor against high voltages produced by electrostatic charging the drain diffusion zone (2) of the transistor and/or the source diffusion zone (3) between the respective associated electrode (6,7;32) and the channel zone (4) is divided into a plurality of parallel strips (10,11). Integrated circuits are also protected against destruction by high voltages if the insulated gate field-effect transistors connected to their output terminals are constructed in the manner outlined above.

Abstract: A circuit arrangement for controlling the operating functions in a device such as a broadcast receiver, including an up/down counter associated with each operating function wherein a particular count corresponds to a certain setting of the operating function. Switch means coupled by a single conductor to the common inputs of two threshold-value circuits provide one of several voltages thereto which cause one or the other or neither of the threshold-value circuits to output a control signal to the up/down center, which in turn counts up, down, or remains at the same count.

Abstract: A remote control receiver for producing different control signals in response to operating signals of respectively different frequencies. The receiver includes operating signal frequency counter which counts operating frequency oscillations in repeated counting cycles and produces an output signal when a predetermined count has been reached. The output signal controls a reference frequency counter which counts the number of reference frequency oscillations in each counting cycle. The count of the reference frequency counter reached during each counting cycle is stored and at the end of each counting cycle, a comparator compares the current count of the reference frequency counter with the stored count. The comparator produces a signal indicating agreement or non-agreement of the compared counts.

Abstract: A multi-character display comprising a plurality of segmented display devices and a control circuit for actuating the individual display devices in time sequence and for tuning on individual segments of an enabled display device in time sequence. The segments and devices are turned off in the same sequence. By suitable selection of the frequency of operation, a viewer perceives a complete display. Reduction of the switching current to that needed for activation of a single element reduces the turn on noise and makes the display particularly suitable for use in TV and radio receivers.