Abstract: A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

Abstract: Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimised set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.