Abstract: An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane and the fingers thereof extend toward the second mirror plane. The linear plate is located at the second mirror plane and connected to one finger of the combs of the second electrode. The first and second mirror planes are orthogonal. The fingers of the combs of the first and second electrodes are interdigitized.

Abstract: An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane and the fingers thereof extend toward the second mirror plane. The linear plate is located at the second mirror plane and connected to one finger of the combs of the second electrode. The first and second mirror planes are orthogonal. The fingers of the combs of the first and second electrodes are interdigitized.

Abstract: A tunable ESD device for multi-power application. The ESD device comprises a substrate, at least one first well of a first conductivity, and a doped region of a second conductivity. The first wells of the first conductivity are located in the substrate. The doped region of the second conductivity substantially surrounds the first wells of the first conductivity. The doped region of the second conductivity is a drain region of a MOSFET and the distance thereto from the first wells of the first conductivity is between 0.01 ?m and 1.5 ?m.