Abstract: Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

Abstract: A silicon carbide single crystal manufacturing device comprises a furnace, a crucible disposed in the furnace, and a seed crystal holder capable of mounting seed crystals. The seed crystal holder is disposed at an upper portion of the crucible, and the seed crystal holder is capable of rotating and lifting up and down. Inside the furnace is further disposed with a furnace heater capable of heating the furnace to form an ambient first temperature gradient in the furnace. A heater-cooler device capable of acting on silicon carbide single crystals is disposed outside the seed crystal holder. The silicon carbide single crystal manufacturing device is capable of growing silicon carbide single crystals at a high speed while ensuring the high quality of the silicon carbide single crystals, thereby realizing large-diameter growth of the silicon carbide single crystals and reducing the loss in post-machining process.

Abstract: The present invention provides a wide band gap semiconductor device and its fabrication process, and pertains to the technical field of semiconductor fabrication technology. It resolves the current issue that the wide band gap semiconductor devices are easy to be affected by thermal expansion. The present wide band gap semiconductor device comprises a chip with a substrate made of a wide band gap semiconductor material, and a base mount made of a wide band gap semiconductor material. In addition, there is a recessed slot structure designed on the base mount to hold the chip. The present invention also provides a fabrication process for wide band gap semiconductor devices. In the wide band gap semiconductor device described in the present invention, both of the base mount and the substrate of the chip are made of wide band gap semiconductor materials, which can achieve the purpose of rapid heat transfer.

Abstract: Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.