Abstract: A wide band reflector, for example a wideband grating reflector is provided as the output coupler of a semiconductor laser. This permits the semiconductor laser to be integrated with other components on a single semiconductor substrate, if desired, without requiring that the laser beam be emitted from the tuning element. Thus, the laser can be tuned over a wide bandwidth with efficient power extraction and high wavelength selectivity.

Abstract: In a grating-assisted coupler, the mode of the first waveguide of the coupler may include some electric field in the second waveguide, with the effect that when light lasses from an input waveguide to the first waveguide, some light is launched, or injected, directly into the mode of the second waveguide. This injected light may or may not be in phase with the light subsequently coupled into the side of the second waveguide from the first waveguide via grating assistance. The grating structure is formed to ensure a desired phase relationship between the injected light and the grating coupled light: under certain conditions of relative phase, the transmission through the coupler may be increased and the bandwidth may be reduced.

Abstract: The output beam from a laser may be modulated using a coupled waveguide modulator that may be endfire coupled to the laser, or integrally formed on a common substrate with the laser, thereby providing a monolithic laser/modulator system that may manufactured using a high-volume semiconductor manufacturing process. The coupled waveguide modulator includes a substrate having a coupler region and an output region. A first waveguide on the substrate is parallel to an optical axis. A second waveguide is formed proximate the first waveguide, is parallel to the optical axis, and is separated from the first waveguide by a coupling distance in at least the coupler region. The second waveguide is nonparallel to the optical axis and separated from the first waveguide by at least the coupling distance in at least part of the output region.

Abstract: An electro-absorption modulator is tunable along with the laser. Tuning the electro-absorption modulator permits optimum detuning to be maintained, even though the laser is tuned over several tens of nm. One approach to tuning the electro-absorption modulator is to heat the electro-absorption modulator. A semiconductor laser device includes a semiconductor laser positioned on a substrate. The semiconductor laser produces output light that is tunable over a tuning range between a first wavelength and a second wavelength. An electro-absorption modulator is disposed to modulate the light produced by the semiconductor laser. The operating temperature of the electro-absorption modulator is tunable so as to maintain constant detuning over at least a portion of the tuning range.

Abstract: The output beam from a laser may be modulated using a coupled waveguide modulator that may be endfire coupled to the laser, or integrally formed on a common substrate with the laser, thereby providing a monolithic laser/modulator system that may manufactured using a high-volume semiconductor manufacturing process. The coupled waveguide modulator includes a substrate having a coupler region and an output region. A first waveguide on the substrate is parallel to an optical axis. A second waveguide is formed proximate the first waveguide, is parallel to the optical axis, and is separated from the first waveguide by a coupling distance in at least the coupler region. The second waveguide is nonparallel to the optical axis and separated from the first waveguide by at least the coupling distance in at least part of the output region.

Abstract: An electro-absorption modulator is tunable along with the laser. Tuning the electro-absorption modulator permits optimum detuning to be maintained, even though the laser is tuned over several tens of nm. One approach to tuning the electro-absorption modulator is to heat the electro-absorption modulator. A semiconductor laser device includes a semiconductor laser positioned on a substrate. The semiconductor laser produces output light that is tunable over a tuning range between a first wavelength and a second wavelength. An electro-absorption modulator is disposed to modulate the light produced by the semiconductor laser. The operating temperature of the electro-absorption modulator is tunable so as to maintain constant detuning over at least a portion of the tuning range.

Abstract: A wide band reflector, for example a wideband grating reflector is provided as the output coupler of a semiconductor laser. This permits the semiconductor laser to be integrated with other components on a single semiconductor substrate, if desired, without requiring that the laser beam be emitted from the tuning element. Thus, the laser can be tuned over a wide bandwidth with efficient power extraction and high wavelength selectivity.