Abstract: An absorber and a method of forming an absorber. The absorber may include a semiconductor absorption structure doped with dopants of a first conductivity type. The absorber may also include a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type. The absorber may further include a dielectric layer between the semiconductor absorption structure and the semiconductor substrate. The absorber may additionally include a buried semiconductor structure included in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.

Abstract: An integrated circuit spectrometer comprises a photonic circuit comprising: an optical input port for receiving light from a light source: and a filter array of filter elements, such as microring resonators, in optical communication with the optical input port. Each microring resonator is characterized by a different series of resonance wavelengths. If alternative filter elements are used, the filter elements may have different filter peaks to each other. The integrated circuit spectrometer also comprises a plurality of detectors, each of which is associated with one of said microring resonators to detect photons from an output of the microring resonator: and at least one processor configured to reconstruct, from signals received at the detectors, an input spectrum of the light received at the optical input port. The input spectrum may be reconstructed by an artificial neural network.

Abstract: Various embodiments may relate to a gas cell. The gas cell may include a chamber body. The gas cell may also include a chamber lid cooperating with the chamber body to form a space. The gas cell may further include an infrared source provided in a through hole of the chamber lid such that the infrared source extends through a thickness of the chamber lid. The gas cell may additionally include a detector provided in a through hole of the chamber body. The gas cell may further include an optical chip arranged within the space such that the optical chip is between the infrared source and the detector. The gas cell may also include three O-rings.

Abstract: A chemical sensor that includes a first semiconductor substrate. The chemical sensor may also include a second semiconductor substrate. The chemical sensor may further include one or more metal layers between the first semiconductor substrate and the second semiconductor substrate such that the first and second semiconductor substrates and the one or more metal layers form a cell including a cavity, the cavity having a depth of any value equal to or less than 100 ?m. The chemical sensor may also include an optical source. The chemical sensor may additionally include an optical detector such that light emitted by the optical source passes through the cell to the optical detector. The first and second semiconductor substrates and the one or more metal layers may also define at least one inlet for fluid to flow into the cavity and at least one outlet for fluid to flow out of the cavity.

Abstract: Various embodiments may relate a chemical sensor. The chemical sensor may include a substrate including a first sealed (or isolated) cavity and a second sealed (or isolated) cavity separate from the first sealed (or isolated) cavity. The chemical sensor may also include an emitter in the first sealed (or isolated) cavity, the emitter configured to emit infrared light. The chemical sensor may further include a detector in the second sealed (or isolated) cavity. The chemical sensor may also include a waveguide configured to carry the infrared light from the emitter to the detector. The waveguide may include a sensing portion configured such that a property of the infrared light carried through the sensing portion changes in response to a chemical entity in contact with the sensing portion. The detector may be configured to detect the change in the property (of the infrared light).

Abstract: Various embodiments may relate to an optical device. The device may include an elongate substrate, an emitter portion at a distal end portion of the elongate substrate, the emitter portion configured to emit light, and an actuator portion at a proximal end portion of the elongate substrate opposite the distal end portion of the elongate substrate. The emitter portion may include a first electrode, a second electrode, and an active layer between the first electrode and the second electrode so that the light is emitted due to an increase in a temperature of the active layer upon application of a first potential difference between the first electrode and the second electrode. The active layer may be patterned to form a photonic crystal layer for enhancing directionality of the emitted light.

Abstract: Various embodiments may relate to an optical device. The device may include an elongate substrate, an emitter portion at a distal end portion of the elongate substrate, the emitter portion configured to emit light, and an actuator portion at a proximal end portion of the elongate substrate opposite the distal end portion of the elongate substrate. The emitter portion may include a first electrode, a second electrode, and an active layer between the first electrode and the second electrode so that the light is emitted due to an increase in a temperature of the active layer upon application of a first potential difference between the first electrode and the second electrode. The active layer may be patterned to form a photonic crystal layer for enhancing directionality of the emitted light.

Abstract: Various embodiments may relate a chemical sensor. The chemical sensor may include a substrate including a first sealed (or isolated) cavity and a second sealed (or isolated) cavity separate from the first sealed (or isolated) cavity. The chemical sensor may also include an emitter in the first sealed (or isolated) cavity, the emitter configured to emit infrared light. The chemical sensor may further include a detector in the second sealed (or isolated) cavity. The chemical sensor may also include a waveguide configured to carry the infrared light from the emitter to the detector. The waveguide may include a sensing portion configured such that a property of the infrared light carried through the sensing portion changes in response to a chemical entity in contact with the sensing portion. The detector may be configured to detect the change in the property (of the infrared light).