Patents by Inventor Leo Anthony Almeida

Leo Anthony Almeida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fullerene addition in photoresist via incorporation in the developer
    Patent number: 6861208
    Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: March 1, 2005
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: J. David Benson, John H. Dinan, Michael Martinka, Leo Anthony Almeida, Phillip R. Boyd, Andrew J. Stoltz, Jr., Andrew W. Kaleczyc
  • Fullerene addition in photoresist via incorporation in the developer
    Publication number: 20040185387
    Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.
    Type: Application
    Filed: March 18, 2003
    Publication date: September 23, 2004
    Inventors: J. David Benson, John H. Dinan, Michael Martinka, Leo Anthony Almeida, Phillip R. Boyd, Andrew J. Stoltz, Andrew W. Kaleczyc