Patents by Inventor Leo F. Luquette, JR.

Leo F. Luquette, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9472511
    Abstract: An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: October 18, 2016
    Assignee: Cypress Semiconductor Corporation
    Inventors: Sungkwon Lee, Roger Bettman, Sai Prashanth Dhanraj, Dung Ho, Leo F Luquette, Jr., Iman Rezanezhad Gatabi, Andrew Walker
  • Publication number: 20150200168
    Abstract: An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region.
    Type: Application
    Filed: December 4, 2014
    Publication date: July 16, 2015
    Inventors: Sungkwon Lee, Roger Bettman, Sai Prashanth Dhanraj, Dung Ho, Leo F. Luquette, JR., Iman Rezanezhad Gatabi, Andrew Walker