Abstract: Method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps, in which a first step (B.sub.1) is performed at a low oxidation temperature (T.sub.1) in an atmosphere containing a mixture of oxygen and hydrogen chloride with a low hydrogen chloride concentration, and in which a second step (B.sub.3) is performed at a high oxidation temperature (T.sub.2), characterized by the feature that the second step (B.sub.3) is performed in a dry oxygen atmosphere. An intermediate step (B.sub.2) may also be employed for heating from the low temperature to the high temperature.