Patents by Inventor Leo M. F. Chirovsky
Leo M. F. Chirovsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8073034Abstract: The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.Type: GrantFiled: May 30, 2008Date of Patent: December 6, 2011Assignee: JDS Uniphase CorporationInventors: Leo M. F. Chirovsky, Ramana M. V. Murty
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Publication number: 20080298416Abstract: The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.Type: ApplicationFiled: May 30, 2008Publication date: December 4, 2008Applicant: JDS Uniphase CorporationInventors: Leo M.F. Chirovsky, Ramana M.V. Murty
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Patent number: 7020172Abstract: Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 ?m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.Type: GrantFiled: May 10, 2004Date of Patent: March 28, 2006Assignee: Optical Communication Products, Inc.Inventors: Ryan Likeke Naone, Andrew W. Jackson, Leo M. F. Chirovsky
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Patent number: 6916672Abstract: A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.Type: GrantFiled: March 29, 2004Date of Patent: July 12, 2005Assignee: Optical Communication Products, Inc.Inventors: Leo M. F. Chirovsky, Ryan Likeke Naone, David Kisker, Stewart Feld
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Patent number: 6898215Abstract: Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 ?m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.Type: GrantFiled: April 11, 2002Date of Patent: May 24, 2005Assignee: Optical Communication Products, Inc.Inventors: Ryan Likeke Naone, Andrew W. Jackson, Leo M. F. Chirovsky
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Publication number: 20040208216Abstract: Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 &mgr;m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Inventors: Ryan Likeke Naone, Andrew W. Jackson, Leo M.F. Chirovsky
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Publication number: 20040180460Abstract: A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.Type: ApplicationFiled: March 29, 2004Publication date: September 16, 2004Inventors: Leo M. F. Chirovsky, Ryan Likeke Naone, David Kisker, Stewart Feld
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Patent number: 6750071Abstract: A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.Type: GrantFiled: July 3, 2003Date of Patent: June 15, 2004Assignee: Optical Communication Products, Inc.Inventors: Leo M. F. Chirovsky, Ryan Likeke Naone, David Kisker, Stewart Feld
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Publication number: 20040058467Abstract: A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.Type: ApplicationFiled: July 3, 2003Publication date: March 25, 2004Inventors: Leo M. F. Chirovsky, Ryan Likeke Naone, David Kisker, Stewart Feld
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Patent number: 6618414Abstract: A vertical cavity laser includes an optical cavity adjacent to a first mirror, the optical cavity having a semiconductor portion and a dielectric spacer layer. A dielectric DBR is deposited adjacent to the dielectric spacer layer. The interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is advantageously located at or near a null in the optical standing wave intensity pattern of the vertical cavity laser to reduce the losses or scattering associated with that interface.Type: GrantFiled: March 25, 2002Date of Patent: September 9, 2003Assignee: Optical Communication Products, Inc.Inventors: John Wasserbauer, Leo M. F. Chirovsky
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Publication number: 20020150135Abstract: Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 &mgr;m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.Type: ApplicationFiled: April 11, 2002Publication date: October 17, 2002Inventors: Ryan Likeke Naone, Andrew W. Jackson, Leo M. F. Chirovsky
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Patent number: 5343032Abstract: An optical receiver, e.g., receiver 10 (FIG. 1), has differential optical input beams and generates an electrical output. The voltage at an electrical node between series-connected optical detector diodes is clamped within a predefined voltage range by series-connected clamping diodes, to prevent the voltage from increasing when consecutive logic one optical input beams are received. Variable bandwidth and low energy dissipation are achieved since the resistors of high input impedance and transimpedance receivers are not required. A second optical receiver, e.g., receiver 20 (FIG. 2) is a monolithic, diode-clamped S-SEED with complementary optical input beams and complementary optical output beams.Type: GrantFiled: April 8, 1993Date of Patent: August 30, 1994Assignee: AT&T Bell LaboratoriesInventors: Leo M. F. Chirovsky, Anthony L. Lentine
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Patent number: 5289015Abstract: FETs and quantum well diodes are combined on the same semi-insulating substrate, while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating substrate is partitioned by a high resistivity proton implanted region, to provide both the P region of the quantum well diode and an isolating buried P layer for the FETs.Type: GrantFiled: October 31, 1991Date of Patent: February 22, 1994Assignee: AT&T Bell LaboratoriesInventors: Leo M. F. Chirovsky, Lucian A. D'Asaro, Shin-Shem Pei, Ted K. Woodward
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Patent number: 5233184Abstract: Monolithic optically bistable modulator arrays, such as an M.times.N array of S-SEEDs, are electrically addressed with a matrix of electrical row and column contacts. Connected to the center node of each S-SEED is an addressing means having elements, such as diodes, transistors, or capacitors, which are electrically enabled and disabled.Type: GrantFiled: December 27, 1991Date of Patent: August 3, 1993Assignee: AT&T Bell LaboratoriesInventors: Leo M. F. Chirovsky, Anthony L. Lentine, David A. B. Miller
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Patent number: 5198656Abstract: An optical switch in which states are defined by dynamic charge storage, rather than contention resolution, and which switches using pulsed radiation having a wavelength somewhat longer than the exciton wavelength in a SEED diode. The switch does not exhibit or need bistability but switches at a relatively low energy as compared to S-SEEDS switched at the exciton wavelength.Type: GrantFiled: June 6, 1991Date of Patent: March 30, 1993Assignee: AT&T Bell LaboratoriesInventor: Leo M. F. Chirovsky
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Patent number: 5056098Abstract: A light emitting device uses a vertical cavity surface emitting laser having a voltage controlled mirror which is used, for example, to turn the laser ON and OFF by varying the reflectivity of one mirror forming the laser cavity.Type: GrantFiled: July 5, 1990Date of Patent: October 8, 1991Assignee: AT&T Bell LaboratoriesInventors: Philip J. Anthony, Leo M. F. Chirovsky, Lucian A. D'Asaro, Vincent D. Mattera, Robert A. Morgan
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Patent number: 4914286Abstract: An optically bistable device, such as a symmetric self electro-optic effect device (S-SEED), is forced into a metastable state prior to the incidence of an optical input signal thereto, thereby increasing the sensitivity of the optically bistable device to the optical input signal, reducing both the switching time and the optical input signal energy required to switch the device. The metastable state is entered into by one of three techniques: (1) turning off the bias voltage V.sub.0 of the device with optical bias beams on then turning on the bias voltage V.sub.0 with the optical bias beams off; (2) applying a predetermined voltage to a node in the device, the predetermined voltage being substantially the metastable state voltage or V.sub.0 /2; or (3) subjecting the device to equal intensity optical bias beams having a wavelength longer than the exciton wavelength.Type: GrantFiled: April 20, 1989Date of Patent: April 3, 1990Assignee: AT&T Bell LaboratoriesInventors: Leo M. F. Chirovsky, Anthony L. Lentine, David A. B. Miller