Abstract: Apparatus and method for accommodating and handling excess deliveries of combined sewage overflows to a sewage treatment plant supported and contained within an offshore moored vessel or platform, by diverting the excess deliveries to ballast tanks for temporary displacement of clean ballast water and to be returned to the treatment system when excess deliveries of combined sewage overflow are relieved. Fluids contained within the ballast tanks are utilized to provide buoyant support for process tankage. Baffles within the ballast tanks minimize undesirable mixing of the combined sewage overflows with the resident clean ballast water.

Abstract: A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation and bottom wall each have an inner and an outer surface. A first devitrification promoter is deposited on the inner surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a first layer of substantially devitrified silica forms on the inner surface which is capable of promoting substantially uniform dissolution of the inner surface and reducing the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material.

Abstract: A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process.

Abstract: A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Granular and chunk polycrystalline silicon are loaded into a Czochralski crucible as a mixed charge. Preferably, the granular polycrystalline silicon is loaded onto the bottom, mounded toward the centerline of the crucible, and not contacting the upper portion of the wall of the crucible. The chunk polycrystalline silicon is loaded onto the granular polycrystalline silicon. The granular polycrystalline silicon and chunk polycrystalline silicon are melted to form a silicon melt, preferably by heating the polycrystalline silicon from the bottom up such that a substantial portion of the granular polycrystalline silicon is melted before a substantial portion of the chunk polycrystalline silicon is melted.

Abstract: A process for preparing a carrier type starch which is characterized by the steps of mixing two starch portions having different gelatinization temperatures with water to form a slurry and causing gelatinization of the starch portion having the lower gelatinization temperature to thereby form a stable gelatinized carrier for the raw starch portion having the higher gelatinization temperature. The ratio of the starch portion having the lower gelatinization temperature to the starch portion having the higher gelatinization temperature is preferably of the order of from 1:10 to 1:4 and the ratio by weight of the starch portions to water is of the order of from 1:2 to 1:4, preferably about 1:3. A carrier type starch based adhesive comprising a mixture of a gelatinized carrier starch portion and a raw starch portion having a higher gelatinization temperature dispersed in the carrier portion is also disclosed.