Patents by Inventor Leon Ashley

Leon Ashley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper interconnections with enhanced electromigration resistance and reduced defect sensitivity and method of forming same
    Patent number: 6348731
    Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with hafnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper interstitial positions.
    Type: Grant
    Filed: January 29, 1999
    Date of Patent: February 19, 2002
    Assignee: International Business Machines Corporation
    Inventors: Leon Ashley, Hormazdyar M. Dalal, Du Binh Nguyen, Hazara S. Rathore, Richard G. Smith
  • Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
    Patent number: 6287954
    Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with hafnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper interstitial positions.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: September 11, 2001
    Assignee: International Business Machines Corporation
    Inventors: Leon Ashley, Hormazdyar M. Dalal, Du Binh Nguyen, Hazara S. Rathore, Richard G. Smith
  • Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
    Patent number: 6130161
    Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with halfnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper intersititial positions.
    Type: Grant
    Filed: May 30, 1997
    Date of Patent: October 10, 2000
    Assignee: International Business Machines Corporation
    Inventors: Leon Ashley, Hormazdyar M. Dalal, Du Binh Nguyen, Hazara S. Rathore, Richard G. Smith