Patents by Inventor Leon Hsu

Leon Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11893847
    Abstract: Evaluation rooms (or fitting rooms) at a clothing store include replenishment closets that are accessible to customers and associates of the clothing store, albeit not at the same time. Doors of evaluation rooms include access control systems with interlocks that govern operation of the respective doors. Before an associate opens a first door between an exterior of an evaluation room and a closet to place an item therein, a second door between an interior of the evaluation room and the closet is locked. After the associate places the item in the closet, the first door is closed and locked, and the second door is unlocked, enabling the customer to open the second door and retrieve the item. Feedback indicating that items are being staged in a closet, or that items are staged therein and the closet is accessible to a customer, is provided to the customer within the evaluation room.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: February 6, 2024
    Assignee: Amazon Technologies, Inc.
    Inventors: Michael Joseph Ausich, Zoe Corneli, Leon Hsu, Erin Meyer, Olga Mironov, Vanessa Nommensen, Philip Pinette, Ilene Mina Rafii, Joelle Marie Torneros, Christian Angelo
  • Publication number: 20040067640
    Abstract: A method for depositing metal to fill an anisotropically etched feature to improve a subsequent CMP process including a semiconductor wafer including a process surface the process surface further including an anisotropically etched opening lined with a blanket deposited barrier/adhesion layer; blanket depositing metal to form a metal layer filling a portion of the anisotropically etched opening; performing a first chemical mechanical polishing (CMP) process to remove at least a portion of the metal layer comprising a metal overlayer formed over the process surface above the anisotropically etched opening; and, repeating the steps of blanket depositing and performing a first CMP process one or more times to form the metal layer substantially filling the anisotropically etched opening.
    Type: Application
    Filed: October 8, 2002
    Publication date: April 8, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Leon Hsu, Tsu Shih, Chen-Hua Yu