Abstract: A hash corresponding to a bit string is generated. The hash corresponds to an address location in a data structure associated with the bit string. An index and a modifier correspond to the address location in the data structure corresponding to the hash associated with a first address location in the data structure are determined. In response to determining that the modifier has a first value associated therewith, index information corresponding to the bit string is written to the first address location in the data structure. In response to determining that the modifier has a second value other than the first value associated therewith, the index information corresponding to the bit string is written to a second address location in the data structure.

Abstract: An example method for power emulation and estimation includes estimating a functional power consumption value associated with a memory system by determining: a scan-based power estimation, scan-based power measurement, a calibration factor from correlating the scan-based power estimation to the scan-based power measurement and a correlated functional power using the calibration factor. The calibration factor can be applied to a functional power estimation in order to achieve better accuracy.

Abstract: A plurality of flip-flops of an integrated circuit (IC) (e.g., an ASIC) are electrically connected in a predefined series. The scan input gate of any give flip-flop in the predefined series is electrically connected to one of a Q output gate or a Q-bar output gate of an adjacent flip-flop in the predefined series. A reset operation for the IC occurs by feeding a bit string of identical bits (e.g., all zeros) through the scan input gate of a first flip-flop of the plurality of flip-flops to reset the plurality of flip-flops without the need for resetting circuitry and accompanying power savings for the IC.

Abstract: A first memory resource is configured to store a data structure. The first memory resource is coupled to a second memory resource that is configured to store a plurality of data structures. A processing device is coupled to the first memory resource, the second memory resource, and a third memory resource. The processing device writes data entries to the data structure within the first memory resource, determine that the data structure within the first memory resource includes a threshold quantity of data entries, and write the contents of the data structure within the first memory resource to a data structure within the second memory resource. The processing resource is further configured to move the contents of the contents of the data structure in the second memory resource to the third memory resource by readdressing the entries written within the second memory resource to virtual addresses associated with the third memory resource.

Abstract: An example method for scan-based voltage frequency scaling can include performing a plurality of at-speed scan operation on a system on chip (SoC) at a plurality of respective voltage values. The example method can include entering data gathered from at least one of the plurality of at-speed scan operations into a database. The entered data is associated with the respective plurality of voltage value. The example method can include determining a particular voltage value of the respective plurality of voltage values at which a parameter of the SoC reaches a threshold. The example method can include indicating the determined particular voltage in the database. The indicated determined particular voltage in the database can be used for performing one or more operations using the SoC.

Abstract: An example method for voltage frequency scaling based on error rate can include performing a plurality of monitoring operations on a system on chip (SoC) at a respective plurality of voltage values (and/or plurality of frequency values and/or temperature values). The example method can include causing error rate data gathered from each of the plurality of monitoring operations to be entered into a database, wherein the entered error rate data is associated with the plurality of voltage values. The entered data is associated with the respective plurality of voltage value. The example method can include generating a plot using the error rate date in the database. The example method can include determining a particular voltage value greater than each of the plurality of voltage values based on the plot and a particular error rate associated with the particular voltage value.

Abstract: A method includes determining a quantity of errors for a bit string based on a quantity of bits having a logical value of one within the bit string and writing an indication corresponding to the quantity of errors for the bit string to an array of memory cells. The method can further include determining that the quantity of errors for the bit string has reached a threshold quantity of errors and refraining from performing a subsequent operation to determine the quantity of errors for the bit string in response to determining that the quantity of errors for the bit string has reached the threshold quantity of errors.

Abstract: A method includes reading, from a memory array, a first counter identifier (ID) based on a pointer corresponding to an address location in the memory array in which the first counter ID is stored. The method includes incrementing the pointer to correspond to an address location in the memory array in which a second counter ID is stored and reading, from the memory array the second counter ID based on the pointer corresponding to the address location in the memory array in which the second counter ID is stored.

Abstract: A method for initiator identifier compression includes associating respective initiator identifiers (IID) of a sub-set of initiators coupled via an interconnection structure to a target with respective parallel target data streams and performing, via an individual target data stream of the target data streams, an operation associated with the target and an individual initiator included in the sub-set of initiators.

Abstract: A method includes supplying, via a first voltage regulator, a first supply voltage to a first voltage domain including circuitry configured to operate at the first supply voltage, supplying, via a second voltage regulator, a second supply voltage to a second voltage domain including circuitry configured to operate in a voltage zone, detecting a change in an error characteristic of data associated with the second voltage domain, and altering the second supply voltage to an altered supply voltage based on the change in the error characteristic.

Abstract: A method includes supplying, via a voltage regulator, a supply voltage to a first voltage domain and a second voltage domain, detecting a change in an error characteristic of data associated with the second voltage domain, and altering the supply voltage to an altered supply voltage based on the change in the error characteristic.

Abstract: A plurality of flip-flops of an integrated circuit (IC) (e.g., an ASIC) are electrically connected in a predefined series. The scan input gate of any give flip-flop in the predefined series is electrically connected to one of a Q output gate or a Q-bar output gate of an adjacent flip-flop in the predefined series. A reset operation for the IC occurs by feeding a bit string of identical bits (e.g., all zeros) through the scan input gate of a first flip-flop of the plurality of flip-flops to reset the plurality of flip-flops without the need for resetting circuitry and accompanying power savings for the IC.

Abstract: A first memory resource is configured to store a data structure. The first memory resource is coupled to a second memory resource that is configured to store a plurality of data structures. A processing device is coupled to the first memory resource, the second memory resource, and a third memory resource. The processing device writes data entries to the data structure within the first memory resource, determine that the data structure within the first memory resource includes a threshold quantity of data entries, and write the contents of the data structure within the first memory resource to a data structure within the second memory resource. The processing resource is further configured to move the contents of the contents of the data structure in the second memory resource to the third memory resource by readdressing the entries written within the second memory resource to virtual addresses associated with the third memory resource.

Abstract: An apparatus includes a memory resource configured to store data entries in a data memory resource including a first data structure and a second data structure and a processing device coupled to the memory resource. The processing device is configured to determine a predicted address location in the first data structure, compare the predicted address location to at least one address threshold, alter the predicted address location to an altered predicted address location, determine an equivalent address location in a second data structure that is equivalent to the altered predicted address location, and write the data entry to the equivalent address location in the second data structure.

Abstract: An apparatus includes a memory resource configured to store data entries in data structures including a first data structure and a second data structure and a processing device coupled to the memory resources. The processing device is configured to determine a predicted address location in the first data structure for a data entry, determine an equivalent address location in the second data structure, and write the data entry to the equivalent address location in the second data structure.

Abstract: A method includes measuring, by a plurality of thermal sensors coupled to a plurality of circuit portion areas of a memory sub-system, temperature information associated with the plurality of circuit portion areas. The method further includes generating a thermal map based on the measured temperature information associated with the plurality of circuit portion areas and determining, based on the thermal map, that at least one of the circuit portion areas has greater than a threshold probability of experiencing a thermal event. The method further includes operating processing circuitry coupled to the plurality of circuit portion areas to mitigate a thermal load associated with the at least one of the circuit portion areas that has greater than the threshold probability of experiencing the thermal event.

Abstract: A plurality of data entries are written in a first memory bank that comprises a portion of a data structure that is stored across a plurality of memory banks. For a subsequent data entry, a determination is made that the subsequent data entry has a value that is greater than a first data entry among the plurality of data entries in the first memory bank and less than a second data entry among the plurality of data entries in the first memory bank. The subsequent data entry is written to an address location in a second memory bank of the plurality of memory banks that is between a lowermost address location and an uppermost address location of the second memory bank and a first bit corresponding to the address location in the second memory bank to which the subsequent data entry was written is stored in the data structure.

Abstract: A voltage tracking circuit includes delay line blocks, a phase detector delay line block, phase detection circuitry, and a controller. The controller determines a first voltage based on a quantity of active delay line blocks among the plurality of delay line blocks and determines a second voltage based on information received from the phase detection circuitry. The controller determines a measured value of a voltage provided by the voltage regulator voltage based on the first voltage and the second voltage.

Abstract: A hash corresponding to a bit string is generated. The hash corresponds to an address location in a data structure associated with the bit string. An index and a modifier correspond to the address location in the data structure corresponding to the hash associated with a first address location in the data structure are determined. In response to determining that the modifier has a first value associated therewith, index information corresponding to the bit string is written to the first address location in the data structure. In response to determining that the modifier has a second value other than the first value associated therewith, the index information corresponding to the bit string is written to a second address location in the data structure.

Abstract: A method includes receiving, by shift circuitry, a bit string comprising a plurality of bits and determining, based on a shifting indicator, a quantity of bits by which the bit string is to be shifted within the shift circuitry. The method further includes generating a shifted bit string by performing, by the shift circuitry, an operation to shift the bit string by the quantity of bits indicated by the shifting indicator and performing, by decision circuitry coupled to the shift circuitry, an operation to alter one or more of the plurality of bits of the shifted bit string from a logical value of one to a logical value of zero or from a logical value of zero to a logical value of one.