Patents by Inventor Leonard C. Feldman
Leonard C. Feldman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11248904Abstract: Systems and methods for measuring a curvature radius of a sample. The methods comprise: emitting a light beam from a laser source in a direction towards a beam expander; expanding a size of the light beam emitted from the laser source to create a broad laser beam; reflecting the broad laser beam off of a curved surface of the sample; creating a plurality of non-parallel laser beams by passing the reflected broad laser beam through a grating mask or a biprism; using the plurality of non-parallel laser beams to create an interference pattern at a camera image sensor; capturing a first image by the camera image sensor; and processing the first image by an image processing device to determine the curvature radius of the sample.Type: GrantFiled: March 26, 2018Date of Patent: February 15, 2022Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEYInventors: Alexei Ermakov, Xiuyan Li, Eric Garfunkel, Leonard C. Feldman, Torgny Gustafsson
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Patent number: 11221210Abstract: Systems and methods for measuring a curvature radius of a sample. The methods comprise: emitting a light beam from a laser source in a direction towards a beam expander; expanding a size of the light beam emitted from the laser source to create a broad laser beam; reflecting the broad laser beam off of a curved surface of the sample; creating a plurality of non-parallel laser beams by passing the reflected broad laser beam through a grating mask or a biprism; using the plurality of non-parallel laser beams to create an interference pattern at a camera image sensor; capturing a first image by the camera image sensor; and processing the first image by an image processing device to determine the curvature radius of the sample.Type: GrantFiled: March 26, 2018Date of Patent: January 11, 2022Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEYInventors: Alexei Ermakov, Xiuyan Li, Eric Garfunkel, Leonard C. Feldman, Torgny Gustafsson
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Publication number: 20210164777Abstract: Systems and methods for measuring a curvature radius of a sample. The methods comprise: emitting a light beam from a laser source in a direction towards a beam expander; expanding a size of the light beam emitted from the laser source to create a broad laser beam; reflecting the broad laser beam off of a curved surface of the sample; creating a plurality of non-parallel laser beams by passing the reflected broad laser beam through a grating mask or a biprism; using the plurality of non-parallel laser beams to create an interference pattern at a camera image sensor; capturing a first image by the camera image sensor; and processing the first image by an image processing device to determine the curvature radius of the sample.Type: ApplicationFiled: March 26, 2018Publication date: June 3, 2021Inventors: Alexei Ermakov, Xiuyan Li, Eric Garfunkel, Leonard C. Feldman, Torgny Gustafsson
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Patent number: 9362367Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.Type: GrantFiled: July 15, 2015Date of Patent: June 7, 2016Assignees: Auburn University, Rutgers, The State University of New JerseyInventors: John R. Williams, Ayayi C. Ahyi, Tamara F Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
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Publication number: 20150318358Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.Type: ApplicationFiled: July 15, 2015Publication date: November 5, 2015Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
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Patent number: 9117817Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.Type: GrantFiled: September 16, 2013Date of Patent: August 25, 2015Assignees: Auburn University, Rutgers, The State University of New JerseyInventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
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Publication number: 20140077227Abstract: Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.Type: ApplicationFiled: September 16, 2013Publication date: March 20, 2014Inventors: John R. Williams, Ayayi C. Ahyi, Tamara F. Isaacs-Smith, Yogesh K. Sharma, Leonard C. Feldman
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Patent number: 7727340Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.Type: GrantFiled: June 8, 2007Date of Patent: June 1, 2010Assignees: Vanderbilt University, Auburn UniversityInventors: Gilyong Y. Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano De Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman
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Publication number: 20080128709Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.Type: ApplicationFiled: June 8, 2007Publication date: June 5, 2008Applicants: Vanderbilt University, Auburn UniversityInventors: Gilyong Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano De Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman
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Patent number: 7235438Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.Type: GrantFiled: May 5, 2005Date of Patent: June 26, 2007Assignees: Vanderbilt University, Auburn UniversityInventors: Gilyong Chung, Chin-Che Tin, John R. Williams, Kyle McDonald, Massimiliano Di Ventra, Robert A. Weller, Socrates T. Pantelides, Leonard C. Feldman
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Patent number: 6939756Abstract: A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.Type: GrantFiled: March 26, 2001Date of Patent: September 6, 2005Assignees: Vanderbilt University, Auburn UniversityInventors: Gilyong Chung, Chin Che Tin, John R. Williams, Kyle McDonald, Massimiliano Di Ventra, Robert A. Weller, Sokrates T. Pantelides, Leonard C. Feldman
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Patent number: 5532510Abstract: A new method to fabricate strain patterns on a strained semiconductor structure, is disclosed. The method is based on the new concept of reverse side etching of a laterally homogeneous, strained structure so that strain changes can be induced in the front-side, pre-strained area as a result of the reverse side etching process. Semiconductor structures such as quantum-wires, quantum dots, and quantum well devices may be formed by the disclosed methods where the reverse side etching provides strain control of the material properties of the semiconductor structure without processing the front side which is generally the active and the most sensitive region of the semiconductor structure. Such semiconductor structures can be formed by a process including the steps of forming a strained layer on the front-side of the structure, and etching the reverse side of the substrate to form a pattern of strain into the front-side, thus forming selectively strained regions.Type: GrantFiled: December 30, 1994Date of Patent: July 2, 1996Assignee: AT&T Corp.Inventors: Netzer Amorai-Moriya, Igal M. Brener, Leonard C. Feldman
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Patent number: 5500391Abstract: A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.Type: GrantFiled: August 9, 1994Date of Patent: March 19, 1996Assignee: AT&T Corp.Inventors: Joze Bevk, Leonard C. Feldman, Hans-Joachim L. Gossmann, Henry S. Luftman, Ran-Hong Yan
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Patent number: 5334306Abstract: A graphite path is formed along the surface of a diamond plate, preferably a CVD diamond plate, by means of a laser or ion-implantation induced conductivity. The path advantageously can be the surface of a sidewall of a via hole drilled by the laser through the plate or a path running along a side surface of the plate from top to bottom opposed major surfaces of the plate. The graphite path is metallized, as by electroplating or electroless plating. In this way, for example, an electrically conducting connection can be made between a metallized backplane located on the bottom surface of the plate and a wire-bonding pad located on the top surface of the plate.Type: GrantFiled: November 19, 1992Date of Patent: August 2, 1994Assignee: AT&T Bell LaboratoriesInventors: William C. Dautremont-Smith, Leonard C. Feldman, Rafael Kalish, Avishay Katz, Barry Miller, Netzer Moriya
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Patent number: 5308796Abstract: It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.Type: GrantFiled: April 27, 1993Date of Patent: May 3, 1994Assignee: AT&T Bell LaboratoriesInventors: Leonard C. Feldman, Gregg S. Higashi, Cecilia Y. Mak, Barry Miller
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Patent number: 5249195Abstract: This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2.Type: GrantFiled: June 30, 1992Date of Patent: September 28, 1993Assignee: AT&T Bell LaboratoriesInventors: Leonard C. Feldman, Neil E. J. Hunt, Dale C. Jacobson, John M. Poate, Erdmann F. Schubert, Arjen M. Vredenberg, Yiu-Huen Wong, George J. Zydzik
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Patent number: 5068868Abstract: This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures.Type: GrantFiled: May 21, 1990Date of Patent: November 26, 1991Assignee: AT&T Bell LaboratoriesInventors: Dennis G. Deppe, Leonard C. Feldman, Rose F. Kopf, Erdmann F. Schubert, Li Wei Tu, George J. Zydzik
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Patent number: 4861393Abstract: A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.Type: GrantFiled: May 28, 1987Date of Patent: August 29, 1989Assignee: American Telephone and Telegraph Company, AT&T Bell LaboratoriesInventors: John C. Bean, Leonard C. Feldman, Anthony T. Fiory
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Patent number: 4529455Abstract: A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described.Type: GrantFiled: October 28, 1983Date of Patent: July 16, 1985Assignee: AT&T Bell LaboratoriesInventors: John C. Bean, Leonard C. Feldman, Anthony T. Fiory
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Patent number: H147Abstract: Helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10.sup.9 ohm-cm for p-type InP and are about 10.sup.3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.Type: GrantFiled: May 31, 1983Date of Patent: November 4, 1986Assignee: AT&T Bell LaboratoriesInventors: Leonard C. Feldman, Marlin W. Focht, Albert T. Macrander, Bertram Schwartz