Abstract: Systems and methods for switching between voltages are provided. One system includes an output, first and second switches coupled to the output. The system also includes a first transmission gate coupled to the first switch and a second transmission gate coupled to the second switch. One method includes receiving, at the first transmission gate, a first pair of complementary voltages and receiving, at the second transmission gate, a second pair of complementary voltages. The method further includes selecting the smallest voltage amongst both pairs of complementary voltages and outputting a third pair of complementary voltages. In one method, the first pair of complementary voltages includes a first negative voltage and a positive voltage, the second pair of complementary voltages includes a second negative voltage and the positive voltage, and the third pair of complementary voltages includes the smaller of the first and second negative voltages and the positive voltage.

Abstract: Apparatus, systems, and methods for providing high voltage to memory devices are provided. One apparatus includes a low voltage input and a two-rail level shifting. The two-rail level shifting is configured to increase the low voltage or to decrease the low voltage to an amount that is less than or equal to a ground potential based on the amount of the low voltage. A system includes a low voltage input for receiving a voltage and a two-rail level shifting coupled to the low voltage input. The two-rail level shifting is configured to increase the voltage to a positive voltage if the voltage is equal to a ground potential and decrease the voltage to a negative voltage if the voltage is greater than the ground potential. One method includes receiving a voltage, modifying the voltage to generate one of a plurality of output voltages, and providing the output voltage to a memory device.

Abstract: Systems and methods for switching between voltages are provided. One system includes an output, first and second switches coupled to the output. The system also includes a first transmission gate coupled to the first switch and a second transmission gate coupled to the second switch. One method includes receiving, at the first transmission gate, a first pair of complementary voltages and receiving, at the second transmission gate, a second pair of complementary voltages. The method further includes selecting the smallest voltage amongst both pairs of complementary voltages and outputting a third pair of complementary voltages. In one method, the first pair of complementary voltages includes a first negative voltage and a positive voltage, the second pair of complementary voltages includes a second negative voltage and the positive voltage, and the third pair of complementary voltages includes the smaller of the first and second negative voltages and the positive voltage.

Abstract: A method of optimizing memory cell write/read is disclosed. The memory cell write/read is optimized by first reading the memory cell data using the normal mode. Next the page latch data that was used to NV (Non-Volatile) write the memory is also read back directly from the page latches. The two data are then compared to verify a successful and optimized memory cell write/read. NV writes and reads are performed with various high voltage parameters and sense amplifier reference settings to arrive at the most optimal one that gives the largest sense window for best write/read reliability. The page latch read mode is also used as a DFT (Design for Test) test mode to check for page latch functionality and page address uniqueness without having to write the memory cell. The page latch is written with logic data and read out directly using the page latch read mode to verify page functionality.