Patents by Inventor Leonard J. Sharpless
Leonard J. Sharpless has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180323041Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.Type: ApplicationFiled: July 9, 2018Publication date: November 8, 2018Inventors: Daniel A. Brown, Michael C. Kellogg, Leonard J. Sharpless, Allan K. Ronne, James E. Tappan
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Patent number: 10037869Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.Type: GrantFiled: October 9, 2015Date of Patent: July 31, 2018Assignee: Lam Research CorporationInventors: Daniel A. Brown, Michael C. Kellogg, Leonard J. Sharpless, Allan K. Ronne, James E. Tappan
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Patent number: 9613834Abstract: A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at a lower end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface.Type: GrantFiled: March 26, 2010Date of Patent: April 4, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Leonard J. Sharpless, Harmeet Singh, Michael S. Kang
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Patent number: 9318349Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.Type: GrantFiled: July 24, 2013Date of Patent: April 19, 2016Assignee: Lam Research CorporationInventors: Leonard J. Sharpless, Keith Comendant
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Publication number: 20160033977Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.Type: ApplicationFiled: October 9, 2015Publication date: February 4, 2016Inventors: Daniel A. Brown, Michael C. Kellogg, Leonard J. Sharpless, Allan K. Ronne, James E. Tappan
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Publication number: 20150047785Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.Type: ApplicationFiled: August 13, 2013Publication date: February 19, 2015Applicant: Lam Research CorporationInventors: Michael C. Kellogg, Daniel A. Brown, Leonard J. Sharpless, Allan K. Ronne
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Publication number: 20130306239Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.Type: ApplicationFiled: July 24, 2013Publication date: November 21, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Leonard J. Sharpless, Keith Comendant
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Patent number: 8540843Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system.Type: GrantFiled: August 23, 2010Date of Patent: September 24, 2013Assignee: Lam Research CorporationInventors: Leonard J. Sharpless, Keith Comendant
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Patent number: 8282987Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: GrantFiled: January 31, 2012Date of Patent: October 9, 2012Assignee: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Publication number: 20120132532Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: ApplicationFiled: January 31, 2012Publication date: May 31, 2012Applicant: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Patent number: 8128750Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: GrantFiled: March 29, 2007Date of Patent: March 6, 2012Assignee: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Publication number: 20120043022Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system.Type: ApplicationFiled: August 23, 2010Publication date: February 23, 2012Inventors: Leonard J. Sharpless, Keith Comendant
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Publication number: 20100243164Abstract: A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface.Type: ApplicationFiled: March 26, 2010Publication date: September 30, 2010Applicant: Lam Research CorporationInventors: Leonard J. Sharpless, Harmeet Singh, Michael S. Kang
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Patent number: 7780791Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.Type: GrantFiled: June 30, 2004Date of Patent: August 24, 2010Assignee: Lam Research CorporationInventors: Leonard J. Sharpless, Keith Comendant
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Publication number: 20080241517Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: ApplicationFiled: March 29, 2007Publication date: October 2, 2008Applicant: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Patent number: 6901808Abstract: A capacitive manometer includes a flow passage through which gas can enter the manometer, a deflectable diaphragm, and a filter arranged in the flow passage. The filter is capable of removing condensable vapors from the gas so that the condensable vapors do not reach and deposit on the diaphragm. The capacitive manometer can include a cooling unit arranged to cool the filter so as to enhance removal of condensable vapors from the gas by the filter. The capacitive manometer can include a baffle having gas passages distributed to control distribution of condensable vapors, which pass through the baffle, on the diaphragm.Type: GrantFiled: February 11, 2003Date of Patent: June 7, 2005Assignee: Lam Research CorporationInventors: Leonard J. Sharpless, Neil Benjamin, Jeffrey W. Fish