Abstract: A method of monitoring a multi-step process, the method comprising implementing a process comprising a plurality of steps represented by a process flow diagram, creating a table for recording data associated with each of the respective plurality of steps, recording data in the table responsive to activities associated with respective ones of the plurality of steps as the process implementation progresses, providing a display of at least a portion of the process flow diagram and at least a portion of the table, and providing an indication on the display of a process step of the flow diagram associated with a data entry selected from the table.

Abstract: Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.

Abstract: Integrated circuit fabrication includes the formation of tungsten contacts in windows. Between the tungsten and the contact region are Ti and TiN layers. Defects are prevented or reduced by sealing grain boundaries in the TiN layer prior to tungsten deposition. Grain boundaries are sealed by rinsing the TiN layer in water at ambient temperature or above.

Abstract: The use of a deposition process involving a plasma struck in a gas including tetraethoxysilane and a source of oxygen yields, at low temperatures, conformal coatings of silicon dioxide. This process has significant implications for semiconductor device fabrication involving the deposition of a dielectric over a metallic non-planar structure.