Abstract: A system and method for managing a plasma system is described. In one embodiment the method includes measuring at least one aspect of a state of plasma in the plasma system so as to obtain plasma state data, receiving subsystem data, which is indicative of at least one subsystem of the plasma system and utilizing both the plasma state data and the subsystem data to manage the plasma system.

Abstract: A plasma measurement device comprises data sensors for sensing properties of the plasma environment together with diagnostic sensors for measuring properties related to the functional integrity of the measurement device. Events reported by the diagnostic sensors of the invention may be interpreted as failures of the measurement device, as warnings requiring operator attention or intervention, or alternatively may be employed as data in a predictive algorithm to estimate the remaining useful lifetime of the device. By providing an ability to detect events indicative of faults or failures in a plasma measurement device during use of the device, the invention provides enhanced certainty and confidence in the integrity of data collected by the plasma measurement device.

Abstract: A diagnostic plasma probe comprises ion sensors for measuring kinetic properties of plasma ions. Ion sensors of the invention include sensors for measuring differential ion flux, ion energy distributions, and ion incidence angle distributions at or near the surface of the probe. The measurement probe is electrically floating so as to cause minimal disruption of the properties of the processing plasma when disposed into a processing environment. A floating electrical bias is applied to the sensors to obtain measurements of ion properties.

Abstract: A diagnostic plasma measurement device is provided having sensors and features disposed using pattern transfer fabrication techniques. A measurement device comprises a primary substrate with sensors for measuring plasma or surface properties disposed by a stepped pattern transfer technique, such as step-and-repeat photolithography, about the surface of the probe. Sensor fields include sensors that measure physical and electrical properties of a plasma, as well as sensors that measure properties of the wafer surface. Fields or components for processing electronics, electrical interconnections, memory, photovoltaic power, and wireless communication are also provided. By utilizing pattern transfer fabrication techniques, the invention generally provides for reduced risks of contamination of a plasma processing environment and increased manufacturability and reliability of the completed sensor device.

Abstract: An in-situ plasma measurement probe comprises a primary substrate, such as a silicon wafer, with sensor devices disposed about the surface of the probe. An electronics module contains electronic components or other elements of the diagnostic probe that require isolation and shielding from the plasma environment. The electronics module is disposed upon the probe substrate and electrically connected to the remote sensor devices through one or more electrical interconnection layers disposed upon the substrate. By integrating and modularizing the electronic components of a sensor probe, the probe design may be optimized for cost effective production techniques while ensuring mechanical, chemical, and thermal compatibility with the wafer or other carrying substrate and the environment to which it is exposed.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, optical emission sensors, or other sensors of plasma or surface properties. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.