Abstract: A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Abstract: A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Abstract: A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a rotating workpiece support is disposed within the process chamber for mounting one or more semiconductor workpieces. An energy source sets up an ion plasma from which is created an ion beam which is caused to impact the surface of the semiconductor workpiece. A Rutherford backscattering detector measures the intensity of backscattered particles and the backscattered ion intensity is correlated to an angle of incidence between the ion beam and the crystalline structure of the semiconductor workpiece.