Abstract: A vehicle cargo carrier device may include first support platform and a second support platform which may be coupled together via a connection bar. The first support platform may also be coupled to a first vertical support arm, and the second support platform may also be coupled to a second vertical support arm. A first arm bracket may couple the first vertical support arm to a first portion of a vehicle, such as to a first support arm of a vehicle hitch receiver that is coupled to the rear vehicle frame, and a second arm bracket may couple the second vertical support arm to a second portion of the vehicle, such as to a second support arm of the vehicle hitch receiver that is coupled to the rear vehicle frame. Preferably, the arm brackets may be coupled to the vehicle so that the arm brackets are positioned apart from the geometric centerline of the vehicle and any hitch receiver that may be coupled to the center of the vehicle.

Abstract: Integrated circuit structures having uniform grid metal gate and trench contact cut, and methods of fabricating integrated circuit structures having uniform grid metal gate and trench contact cut, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A first dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. A second dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact, the second dielectric cut plug structure laterally spaced apart from and parallel with the first dielectric cut plug structure.

Abstract: Integrated circuit structures having trench contact depopulation structures, and methods of fabricating integrated circuit structures having trench contact depopulation structures, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate stack is over the vertical stack of horizontal nanowires. A dielectric trench structure is adjacent to the gate stack. A dielectric sidewall spacer is between the gate stack and the dielectric trench structure. A dielectric gate cut plug is extending through the gate stack, the dielectric sidewall spacer, and the dielectric trench structure.

Abstract: A vehicle cargo carrier device may include first support platform and a second support platform which may be coupled together via a connection bar. The first support platform may also be coupled to a first vertical support arm, and the second support platform may also be coupled to a second vertical support arm. A first arm bracket may couple the first vertical support arm to a first portion of a vehicle, such as to a first support arm of a vehicle hitch receiver that is coupled to the rear vehicle frame, and a second arm bracket may couple the second vertical support arm to a second portion of the vehicle, such as to a second support arm of the vehicle hitch receiver that is coupled to the rear vehicle frame. Preferably, the arm brackets may be coupled to the vehicle so that the arm brackets are positioned apart from the geometric centerline of the vehicle and any hitch receiver that may be coupled to the center of the vehicle.

Abstract: A motor vehicle tracking and information system that uses a radio-frequency electronic vehicle license plate in conjunction with roadside receivers and an information system architecture. The system is used to identify and track vehicles, detecting vehicles operating in violation of the law, and automatically issuing citations.