Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. Various magnets located along the beamline are provided for manipulating the ion beam and ions. Ion beam implanters having magnets including superconducting magnet coils are disclosed.

Abstract: Mechanisms and techniques provide a system to evaluate operational integrity of a data processing system such as an area augmentation system by obtaining at least one set of distribution data related to information processed by the data processing system. The set(s) of distribution data can include corrections information and integrity bounds information related to the corrections information. The system applies a moment generating function to the set of distribution data to produce a moment bounded distribution data result and compares the moment bounded distribution data result to an integrity limit to determine if the data processing system operates within an acceptable integrity threshold. The system can be used in real-time or non-real time with sets of distribution data that are non-Gaussian, non-symmetric and/or non-unimodal.

Abstract: The present invention includes an angle adjuster that alters the path of an ion beam prior to contacting a target wafer. The path is altered according to a target position on the wafer in one or two dimensions in order to compensate for angle variations inherent in batch ion implantation system. The angle adjuster comprises one or more bending elements that controllably alter the path of the ion beam during ion implantation. As a result, the target wafer can be implanted with a substantially uniform implant angle.